Microwave-assisted synthesis and characterization of tin oxide nanoparticles

Krishnakumar, T.; Pinna, Nicola; Kumari, Khushboo; Perumal, K.; Jayaprakash, R.

doi:10.1016/j.matlet.2008.02.062

Cited by 138 publications

(54 citation statements)

References 40 publications

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“…Various techniques had been employed for the synthesis of the nano/micro structured ZnO such as sol-gel process [10], homogeneous precipitation [5], thermal decomposition [11], microwave heating [12], conventional hydrothermal [13][14][15], etc. Compared with the conventional heating methods, the microwave heating has many advantages of developing small particles of metal oxides with nano or micro sizes and better purity in short time [16][17][18][19]. In this paper, microwave heating has been utilized for the preparation of the zinc oxide in the presence of different reducing agents such as sodium borohydride, hydrazine hydrate and urea.…”

Section: Introductionmentioning

confidence: 99%

Effect of reducing agents on the structure of zinc oxide under microwave irradiation

2013

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Zinc oxide was synthesized from zinc sulphate using different reducing agents under microwave irradiation. The influence of sodium borohydride, hydrazine hydrate and urea on the shape and size of the products were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). SEM showed the nano-sized spherical and rectangular shaped structures in case of sodium borohydride and hydrazine hydrate, whereas micro-sized hexagonal structures were formed in case of urea under the same irradiation power. The reducing agents played an important role in forming the various structures. Thus different shapes and size of structures were produced by only varying the reducing agent, which had wide applications in various fields.

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Section: Introductionmentioning

confidence: 99%

Effect of reducing agents on the structure of zinc oxide under microwave irradiation

2013

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“…Among the various semiconductor materials, conducting n-type semiconductor tin oxide (SnO 2 ) is having a wide band gap of Eg = 3.6-3.8 eV [4] at room temperature. This conducting oxide is a well known functional material, which can be operative at low temperature with high sensitivity for applications such as gas sensors, transparent conducting electrode, transistor, solar cells, special coating for energy-conversion, low-emissivity windows, and nanoelectronic devices [5][6][7]. Thus, a great deal of research work has been devoted to the method of synthesizing SnO 2 particles of nano sizes in a controllable manner.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Studies on Nanocrystalline Tin Oxide Powder for Optoelectronic Devices

Nehru¹,

Swaminathan²,

Sanjeeviraja³

2012

MATERIALS

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Nanocrystalline tin oxide (SnO 2 ) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO 2 nanocrystalline powders were calculated by Rietveld analysis. The average crystallite size of 9 -43 nm was obtained for SnO 2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 -0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO 2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.

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“…SnO2 quantum dots can be synthesized using many techniques such as laser ablation method [5], wet chemical route [6] and microwave heating method [7]. However, all this method requires critical reaction condition, use of toxic chemicals and longer reaction times [8].…”

Section: Introductionmentioning

confidence: 99%