Microwave GaAs FET Switching

Gaspari, R.A.; Yee, Hoshin

doi:10.1109/mwsym.1978.1123786

Cited by 22 publications

(1 citation statement)

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“…Nowadays, PIN diode [4], as well as GaAs FET (Gallium arsenide field effect transistor) [5], has been widely used in RF switch. In this paper, a switch module for GSM application is designed with PIN diode, which is much cheaper and more widely used than GaAs FET.…”

Section: Introductionmentioning

confidence: 99%

An antenna switch module for GSM application using LTCC technology

Hong

Peng

Mao

2010

2010 International Conference on Microwave and Millimeter Wave Technology

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An antenna switch module using PIN (P region-I region-N region) diode for GSM (Global System for Mobile communications) application has been designed and fabricated. By taking advantage of three-dimensional integration of the LTCC (low-temperature co-fired ceramic) substrate and through a novel design of miniature lumped-element realization of transmission line, the size of proposed GSM switch is 7.64mm×4.20mm×0.67mm.The measured in-band isolation of the antenna switch module is better than-28 dB and IL (insertion loss) is less than -1.3dB, which are in good agreement with the simulated results. It also has the advantages of increased density, tight integration, and low cost.Index Terms-antenna switch module, lumped-element circuit, LTCC (low temperature co-fired ceramic), PIN diode.

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Section: Introductionmentioning

confidence: 99%

An antenna switch module for GSM application using LTCC technology

Hong

Peng

Mao

2010

2010 International Conference on Microwave and Millimeter Wave Technology

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High isolation microstrip GaN-HEMT Single-FET Switch

Ciccognani

Ferrari

Limiti

2010

Int J RF and Microwave Comp Aid Eng

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In this contribution an analytical approach to the design of high-isolation microwave transmission line-resonated switches is presented. Simulated and measured performance of a GaN HEMT single-FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm.

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