2019
DOI: 10.1038/s41598-019-55220-9
|View full text |Cite
|
Sign up to set email alerts
|

Microwave magnetic field modulation of spin torque oscillator based on perpendicular magnetic tunnel junctions

Abstract: Modulation of a microwave signal generated by the spin-torque oscillator (STO) based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
4
0

Year Published

2022
2022
2025
2025

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 25 publications
0
4
0
Order By: Relevance
“…This mechanism is in contrast with that of the previous work 21 , where a mutual synchronization is the origin of the associative memory operation. Also, the method is different from the previous works 38 , 39 . In Ref.…”
Section: Discussionmentioning
confidence: 80%
See 1 more Smart Citation
“…This mechanism is in contrast with that of the previous work 21 , where a mutual synchronization is the origin of the associative memory operation. Also, the method is different from the previous works 38 , 39 . In Ref.…”
Section: Discussionmentioning
confidence: 80%
“…In Ref. 39 , a delayed-feedback was used to generate input signal, while the input signal in the present work is generated by multiplying appropriated weight to perform the associative memory operation.…”
Section: Discussionmentioning
confidence: 99%
“…Their key features are frequency tunability (12), nanoscale size (10), broad working temperature (13), and easy integration with the standard silicon technology (6,14). As strongly nonlinear devices, STNOs can exhibit different dynamic regimes, which are promising candidates for various applications including microwave signal generation and detection (15)(16)(17), signal modulation (18), spin wave generation (19), neuromorphic computing (20)(21)(22), etc.…”
Section: Introductionmentioning
confidence: 99%
“…The current density was set to 60 MA/m 2 . The parameters partially taken from[55], with the MTJ composition of CoFeB(2.5nm)/MgO (1nm)/CoFeB(1.8nm).…”
mentioning
confidence: 99%