Microwave noise performance of InP/InGaAs heterostructure bipolar transistors

Microwave noise characterisation of AlInAs/GaAsSb/InP DHBTs

“…At peak f T bias, the device S-parameter data revealed that R E ¼ 6.6 V, while the total base resistance amounts to R B ¼ 9.8 V. It is not straightforward to adequately compare the noise performance of bipolar transistors across different technologies because noise parameters depend on the device gain, bandwidth, as well as on the geometry. In comparison to InP/GaInAs sHBTs, the present devices offer nearly a 2 dB advantage at a current density of 0.5 mA/mm 2 for similar G A at 10 GHz [6], but they show a 1.0 -1.5 dB higher lowcurrent noise at 1 GHz. InP/GaInAs DHBTs were reported with NF min ¼ 2.2 dB at 18 GHz [5].…”

Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

“…1,2 The use of C as an acceptor is desirable for npn heterojunction bipolar transistor ͑HBT͒ applications because C is less diffusive than either Be or Zn. Thus, a higher base doping concentration and a reduced setback layer thickness can be used with C doping, leading to a reduced extrinsic base resistance and improved high frequency performance.…”

Design of an ultraviolet filter based on photonic band‐gap materials

“…InP/InGaAs heterojunction bipolar transistors (HBTs) latticematched (LM) to InP have demonstrated excellent microwave and noise performance compared to the commonly used GaAs HBTs due to the superior transport properties of InGaAs and the low surface recombination velocity of the InP/InGaAs material system [1,2]. For example, a world-record f MAX of ϳ800 GHz has been reported [3]; an InP HBT with a low-noise figure of 0.46 dB at 2 GHz has also been demonstrated [4]. However, InP-based HBTs have several device and substrate-processing limitations such as difficulties in substrate handling, smaller wafer size, and higher cost.…”

“…A global change in the telecommunication transport world has aroused great demands for photonic band gap (PBG) materials. This has led to considerable scientific attention being paid to these materials lately, because of their ability to manipulate photons and their potential applications in the field of photonics, such as efficient optical filters [1,2], omnidirectional reflectors [3,4], thresholdless semiconductor lasers [5], endlessly single-mode optical fiber [6], et cetera and anomalously small group velocities at the band edges. Photonic band-gap material is a new optical material in which the refractive index changes periodically and the band gap can be formed for a certain range of photon energies [7] or photon frequencies.…”