Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Khan, M. Asif; Chen, Q.; Yang, Jinwei; Shur, M. S.; Dermott, B.T.; Higgins, J.A.

doi:10.1109/55.506356

Cited by 179 publications

(66 citation statements)

References 7 publications

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“…We used the velocity saturation HFET model in order to derive an expression linking f t to the low-field mobility, saturation velocity, gate length, and intrinsic gate voltage swing, V GT = V GS -V th where V GS = V gs -I ds R s and V gs is the applied gate to source voltage. Then the calculated cut-off frequency is given by [15] ( )…”

Section: Cut-off Frequency Modelmentioning

confidence: 99%

DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor

Muhtadi

Hossain

Bhuiyan

et al. 2011

Phys. Status Solidi C

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This paper reports on a theoretical analysis of DC and RF performances of a novel In0.1Ga0.9N/InN HEMT. A very high cut‐off frequency and attractive DC characteristics have been predicted. A simple analytical model is used to explain the DC characteristics. The cut‐off frequency which has been found more than 0.6 THz for a gate length of 0.1 µm is explained with low‐field mobility. The maximum drain current and transconductance have been found around 1000 mA/mm and 625 mS/mm, respectively. Similar analysis have been performed for the conventional AlGaN/GaN HEMT and compared with the proposed InGaN/InN HEMT. The predicted results are found to be in good agreement with previously published results. The calculated results show that InN‐based HEMT has very high cut‐off frequency and transconductance when compared with the conventional GaN‐based HEMT for the same gate length. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Cut-off Frequency Modelmentioning

confidence: 99%

DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor

Muhtadi

Hossain

Bhuiyan

et al. 2011

Phys. Status Solidi C

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“…However, soon it was also recognized their favorable properties for the implementation of electronicpower devices, high-performance and high-frequency transistors [109][110][111][112][113], with superior characteristics than those based on silicon [114,115]. The efforts undertaken on the investigation of the III-Nitrides steady-state transport properties, looking for a better determination of bulk material parameters and band structure [116], are relevant for establishing their figure of merit for electronic devices with certain confidence.…”

Section: Nonlinear Transport In Highly-polar Semiconductorsmentioning

confidence: 99%

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Rodrigues¹,

Silva²,

Silva³

et al. 2010

Braz. J. Phys.

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The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on ThermoStatistics. We do face situations in electronics and optoelectronics involving physical-chemical systems farremoved-from equilibrium, where ultrafast (in pico-and femto-second scale) and non-linear processes are present. Further, we need to be aware of the rapid unfolding of nano-technologies and use of low-dimensional systems (e.g., nanometric quantum wells and quantum dots in semiconductor heterostructures). All together this demands having an access to a Statistical Mechanics being efficient to deal with such requirements. It is worth noticing that the renowned Ryogo Kubo once stated that "statistical mechanics has been considered a theoretical endeavor. However, statistical mechanics exists for the sake of the real world, not for fictions. Further progress can only be hoped by close cooperation with experiment". Moreover, one needs to face the study of soft matter and fluids with complex structures (usually of the average self-affine fractal-like type). This is relevant for technological improvement in industries like, for example, that of polymers, petroleum, cosmetics, food, electronics and photonics (conducting polymers and glasses), in medical engineering, etc. It is then required to introduce a thermo-hydrodynamics going well beyond the classical (Onsagerian) one. Moreover, in the both type of situations above mentioned there often appear difficulties of description and objectivity (existence of so-called "hidden constraints"), which impair the proper application of the conventional ensemble approach used in the general, logically and physically sound, and well established Boltzmann-Gibbs statistics. A tentative to partially overcome such difficulties consists in resorting to non-conventional approaches. Here we briefly describe the construction of a Non-Equilibrium Statistical Ensemble Formalism (NESEF) that can deal, within a certain degree of success, with the situations above described. Several particular instances involving experimental observations and measurements in the area of semiconductor physics and in physics of fluids, which were analyzed in the context of the theory, are summarized. They comprise the cases of ultrafast optical spectroscopy; optical and transport processes in low-dimensional complex semiconductors; nonlinear transport in doped highly-polar semiconductors (of use in "blue diodes") under moderate to high electric fields; nonlinear higher-order thermo-hydrodynamics in fluids under driven flow, in normal solutions and in complex situations as in solutions of polymers, micelles, DNA, and in microbatteries.

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“…1 Introduction Due to the properties of wide bandgap III-V nitrides, AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as attractive candidates for high voltage, high power operation at microwave frequencies [1]. In these devices, the presence of strong spontaneous and strain-induced piezoelectric polarization due to lattice mismatch between AlGaN and GaN results in very high free carrier concentrations near the interface and without any intentional doping [2].…”

mentioning

confidence: 99%

Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

Cordier¹,

Hugues²,

Lorenzini³

et al. 2005

phys. stat. sol. (c)

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In the present work, AlGaN/GaN HEMTs were grown by MBE on Si(111) and SiC substrates. The mobility profiles achieved by Hall effect and with the combination of capacitance and conductivity measurements were compared. A clear dependence of the electron mobility was observed with the 2DEG carrier density. However the maximum of mobility achievable in the samples depends on the structural quality of the layers, the dependence is similar for all studied samples. Furthermore, this behavior is shown to account for the I-V transfer characteristics of the transistors realized on these layers.

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Cited by 179 publications

References 7 publications

DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor

DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Cited by 179 publications

References 7 publications

DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

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Product

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DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor

DC and RF performance of an In_0.1Ga_0.9N/InN high electron mobility transistor