Abstract:4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in
Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical
characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave
testing) has been performed. The results showed that SEV-grown SiC material is suitable for
bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower
than 1016 cm-3 for the n-type base layer is necess… Show more
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