No abstract

ABSTRACT4H-SiC p+-n-n+ diodes of low series resistivity were fabricated and packaged. The diodes exhibited a homogeneous avalanche breakdown at voltage Ub=260V. These diodes were capable to dissipate a pulsed power density of 7.4 MW/cm2 at avalanche current. Isothermal I-V characteristics of fabricated diodes were measured at forward bias and at avalanche breakdown. An experimental determination of the electron saturated drift velocity along the c-axis in 4H-SiC was performed for the first time. It was found to be 7.7×106cm/s at room temperature.

No abstract

No abstract

No abstract