Thermal calculation of SiC p-i-n diodes

Gamuletskaya, PB; Kirillov, A.V.; Lebedev, A.A.; Romanov, L.P.; Smirnov, VA

doi:10.1134/1.1734679

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…After that, the storage of the holes at the n + -n junction (and in the base as a whole) produces a fast decrease in the voltage drop. The experimental set-up used in this work could not realize the 'flying electron front' mode of operation, however this mode of operation can be regarded as very promising one for microwave SiC p-i-n diodes [22].…”

Section: The Mode Of a Flying Electron Frontmentioning

confidence: 99%

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

Mnatsakanov

Levinshteǐn

Иванов

et al. 2004

Semicond. Sci. Technol.

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The switch-on process in 6 kV 4H-SiC junction diodes has been investigated experimentally and theoretically. The results of a detailed computer simulation are compared with the data furnished by the analytical theory. It is demonstrated that, at high current densities exceeding the critical value j cr = eN D v s (e is the elementary charge, N D is the base doping level, and v s is the carrier saturation velocity) and rather short current rise time (1 ns), an extremely fast base modulation can be achieved. In this mode, the base is spanned by an electron front that moves from the n + -n to the p + -n emitter with a velocity v s and by a relatively slow quasi-neutral hole front moving in the opposite direction, from the p + -n to the n + -n junction.

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Section: The Mode Of a Flying Electron Frontmentioning

confidence: 99%

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

Mnatsakanov

Levinshteǐn

Иванов

et al. 2004

Semicond. Sci. Technol.

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“…However, the temperature of the diode strongly increases due to self-heating, and such I-V characteristics cannot be considered isothermal. Meanwhile, just isothermal (I-V) characteristics should be used to calculate self-heating effects in both static and transient modes [8][9][10][11][12]. In this paper, we analyse the situation in which isothermal I-V characteristics cannot be measured experimentally in principle.…”

Section: Introductionmentioning

confidence: 99%

Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities

Levinshteǐn

Mnatsakanov

Иванов

et al. 2007

Semicond. Sci. Technol.

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It is shown that, at high current densities corresponding to current surges, the isothermal current-voltage characteristics of high-voltage silicon carbide diodes cannot, in principle, be measured experimentally if the lifetime of nonequilibrium carriers is high enough for effective modulation of the base resistance. In such cases, isothermal current-voltage characteristics must be 'reconstructed' from experimental pulse current-voltage curves by comparison with an adequate analytical or numerical model. A procedure of this kind is performed for high-voltage 4H-SiC rectifier diodes with a record-breaking high carrier lifetime τ of 3.7 µs at room temperature.

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