Microwave p-i-n diodes and switches based on 4H-SiC

Camara, Nicolas; Zekentes, K.; Romanov, L.P.; Kirillov, A.V.; Boltovets, Mykola S.; Vassilevski, Konstantin; Haddad, G.I.

doi:10.1109/led.2005.862686

Cited by 16 publications

(9 citation statements)

References 4 publications

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“…The waveguide switches were able to handle microwave power of 1.8 kW in the isolation mode with corresponding values of V and T of 300 mV and 200 • C, respectively. This value of handled microwave power is similar to the value reported previously with CVD-based diodes switches [23].…”

Section: Microwave Characterization Of P-i-n Diodessupporting

confidence: 89%

“…Figure 13 shows a typical reverse recovery curve from a SEV-grown sample. Reverse recovery characteristics of 4H-SiC CVD-grown p-i-n diodes were already reported in a previous paper [23]. It is interesting to note that the value of switching time as well as of the effective carrier lifetime does not drastically vary for the investigated diodes whatever their origin (SEV or CVD-grown).…”

Section: Characterization Of P-i-n Diodessupporting

confidence: 69%

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4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

Camara¹,

Zekentes²,

Zelenin³

et al. 2008

Semicond. Sci. Technol.

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Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

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Section: Microwave Characterization Of P-i-n Diodessupporting

confidence: 89%

Section: Characterization Of P-i-n Diodessupporting

confidence: 69%

4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

Camara¹,

Zekentes²,

Zelenin³

et al. 2008

Semicond. Sci. Technol.

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“…The diodes used for the modulator fabrication exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 Ω, a punch-through voltage (100 V) capacitance below 0.5 pF and a carrier effective lifetime of 15 ns. Best switches have demonstrated an isolation of 22-25 dB and insertion loss of 0,7 -1,0 dB [2,6]. Waveguide switches were able to handle microwave power of 2 kW in the isolation mode with a corresponding increase of diodes temperature at 140 o C. The isolation was stable at 100mA for all power levels at around 22.5 dB.…”

Section: Introductionmentioning

confidence: 98%

“…Moreover, a SiC p-i-n diode could dissipate substantially higher thermal power than a similar Si diode. Indeed, 4H-SiC p-i-n diode based single-pole single-through (SPST) switches [1,2] and limiters [3] as well as IMPATT oscillators [4] have been demonstrated inciting industrial interest [5].…”

Section: Introductionmentioning

confidence: 99%

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Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Zekentes¹,

Basanets

Boltovets

et al. 2008

MSF

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Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.

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