4H-SiC PIN diodes for microwave applications

Zekentes, K.; Camara, Nicolas; Romanov, L.P.; Kirillov, A.V.; Boltovets, Mykola S.; Лебедев, А. А.; Vassilevski, Konstantin

doi:10.1109/smicnd.2005.1558702

Cited by 4 publications

(5 citation statements)

References 4 publications

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“…Applying the methodology with the same characteristics of the diodes used in [16] These parameters are the same as the p-i-n diode used in [12]. Figure 2 shows the responses obtained by the microwave switches using p-i-n diodes designed with the semiconductor materials mentioned.…”

Section: Performance Parameters For Series-shunt and Tee Compound Swimentioning

confidence: 99%

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Vega

Badaoui

Hinojosa

2014

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Se presenta un análisis de desempeño de conmutadores de microondas compuestos, de una entrada y una salida (SPST), diseñados con diodos p-i-n tipo masa con diferentes tipos de materiales semiconductores para las bandas de frecuencia Ku y Ka. Las dos configuraciones de conmutadores compuestos más comunes son aquellos con diodos p-i-n ubicados en diseños serie-paralelo y serie-paralelo-serie (TEE) y aquí son analizados utilizando materiales semiconductores de Si, GaAs, GaN-WZ, GaN-ZB, GaSb, InP y SiC. Se presenta la metodología utilizada en los cálculos de resistencia serie y capacitancia de unión en los diodos p-i-n con el propósito de calcular los parámetros de desempeño propios de cada dispositivo conmutador. Estos parámetros son pérdida de inserción y aislamiento. Los conmutadores de tipo serie-paralelo, exceptuando el conmutador basado en diodo p-i-n de SiC-6 H, exhiben pérdidas de inserción menores a 0.2 dB y aislamiento hasta 41dB a la frecuencia de operación de 12 GHz. El conmutador diodo p-i-n tipo TEE con base en GaN-ZB tiene la mejor respuesta de pérdida de inserción menor a 0.23 dB y aislamiento hasta 52 dB, a las frecuencias de operación de 12 GHz y 30 GHz. El conmutador compuesto con base en diodo p-i-n de GaSb alcanza el mejor desempeño a la frecuencia de 12 GHz. Los conmutadores de microondas con configuración TEE tienen respuestas satisfactorias para la frecuencia de 30 GHz.

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Section: Performance Parameters For Series-shunt and Tee Compound Swimentioning

confidence: 99%

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Vega

Badaoui

Hinojosa

2014

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show abstract

“…The substrate was first thinned down to 150µm for series and thermal resistance reduction purposes (in the following discussion the results from non-thinned substrates will be explicitly mentioned). Subsequent diode's fabrication procedure was described elsewhere ( [4] and references therein). The diode dies of 0.6x0.6 mm were mounted in special packages suitable for discrete microwave devices and capable of high voltage and high temperature operation [4,5].…”

Section: H-sic Diode Fabrication Packaging and Characterizationmentioning

confidence: 99%

“…Subsequent diode's fabrication procedure was described elsewhere ( [4] and references therein). The diode dies of 0.6x0.6 mm were mounted in special packages suitable for discrete microwave devices and capable of high voltage and high temperature operation [4,5]. In the frame of the present study, the surface of the 4H-SiC diode mesas was covered after the bonding with a high-temperatureresistant dielectric compound to increase the diodes breakdown voltage.…”

Section: H-sic Diode Fabrication Packaging and Characterizationmentioning

confidence: 99%

“…More details on the DC and transient characterization of the fabricated 4H-SiC p-i-n diodes can be found in [2,4,5] and references therein.…”

Section: H-sic Diode Fabrication Packaging and Characterizationmentioning

confidence: 99%

“…Therefore, a reduction of the substrate thickness is necessary to reduce the series resistance and correspondingly increase isolation without increasing of the insertion loss in contrast to the case of mesa structure diameter increase. Full details on similar measurements performed in the first batch of switches are given in [2,4]. Best switches have demonstrated isolation loss of 22-25 dB and insertion loss of 0,7 -1,0 dB.…”

Section: Silicon Carbide and Related Materials 2006mentioning

confidence: 99%

See 2 more Smart Citations

Microwave p-i-n Diodes and Switches Based on 4H-SiC

Zekentes

Camara

Romanov

et al. 2007

MSF

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4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 &, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, exhibited insertion loss 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns.

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Structure design and characteristics analysis of 4H-SiC PiN switching diodes

Zhang

Zhang²,

Zhang³

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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A novel structure of 4H-SiC PiN switching diode with gradual changing doping concentration in n-base region is proposed in order to improve the switching characteristics. The device characteristics are simulated by ISE-TCAD. It is shown that there are about 30% increment in the softness parameters Sand 10% shorter in reverse recovery time tIT, compared with conventional SiC PiN switching diode with constant doping in n-base region. Simultaneously, as the conductivity modulation effect in the n-base region, the forward I-V characteristics are almost invariant.

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4H-SiC PIN diodes for microwave applications

Cited by 4 publications

References 4 publications

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Microwave p-i-n Diodes and Switches Based on 4H-SiC

Structure design and characteristics analysis of 4H-SiC PiN switching diodes

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