Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

Haacké, M.; Coustel, Romain; Rouessac, V.; Roualdès, S.; Julbe, A.

doi:10.1002/ppap.201500058

Cited by 12 publications

(11 citation statements)

References 34 publications

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“…The deposition reactor is a cylindrical chamber, with a limit pressure of 1.10 -6 mbar. The ECR antennas [30] supply the plasma power in the chamber from a microwave generator (2.45 Hz, Sairem). The applicators are distributed on the top of the chamber, forming a rectangular lattice matrix (3 x 2).…”

Section: Films Depositionmentioning

confidence: 99%

“…This distribution ensures the homogeneity of the discharge and the deposited films. [30] The HMDSO precursor (Sigma-Aldrich, ≥ 98.5%) was injected into the chamber using a mass flow controller (Brooks) with no dilution or carrier gas. All depositions were performed at room temperature, while the plasma input power W and the monomer flux F were varied from 20 W to 140 W and from 1 sccm to 8 sccm, respectively.…”

Section: Films Depositionmentioning

confidence: 99%

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Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Dakroub

Duguet

Esvan

et al. 2021

Surfaces and Interfaces

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Plasma polymerized organosilicon thin films were deposited in a MW-PECVD using hexadimethylsiloxane (HMDSO) as a precursor. Thin films were synthetized with different plasma conditions ranging from soft (low plasma energy) to hard (high plasma energy) ones. Quantitative 29 Si solid state NMR and FTIR spectroscopy were used to characterize the bulk composition. X-ray photoelectron spectroscopy (XPS) coupled with Density functional theory (DFT) calculations were used to determine the surface chemical composition. The bulk and the surface of the plasma polymerized HMDSO (PP-HMDSO) showed a complex chemical composition. The four main environments M, D, T and Q were present in the films. An additional environment Si(CH2)(CH3)3 denoted S was detected in the PP-HMDSO films. The chemical composition comparison showed a difference between the bulk and the surface of the films. Under soft plasma conditions, a high amount of SiOC3 termination was present in the bulk of the films. While, the SiO2C2 chains were highly present on the surface. On the other hand, under hard plasma conditions, the number of the SiOC3 termination increased on the surface and decreased in the bulk. Under soft plasma conditions, the PP-HMDSO structure was close to PDMS, while under hard plasma conditions, the PDMS similarity was lost.

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Section: Films Depositionmentioning

confidence: 99%

Section: Films Depositionmentioning

confidence: 99%

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Dakroub

Duguet

Esvan

et al. 2021

Surfaces and Interfaces

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Section: 17mentioning

confidence: 99%

“…In addition to the effect of hydrogen, optical properties are directly affected by the growth parameters. The influence of deposition temperature on the aging mechanism of PECVD-grown SiC x N y films was reviewed by Huber et al 18 and Haacke et al 19 The dependence of mechanical properties on the deposition temperature was investigated by Ctvrtlik et al20 in a-SiC x N y films grown using sputtering.Despite reports on promising mechanical properties of SiC x N y thin films, they have not yet been well explored optically. Understanding the interdependency of light emission properties and film composition and structure requires a comprehensive study.…”

mentioning

confidence: 99%

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Khatami

Bosco

Wójcik

et al. 2018

ECS J. Solid State Sci. Technol.

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The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiC x N y :H) thin films were studied. Thin films were fabricated using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a range of substrate temperatures from 120 to 170 • C (corresponding to deposition temperatures of 300 to 450 • C) in a mixture of SiH 4 , N 2 , and CH 4 precursors. Variable angle spectroscopic ellipsometer (VASE), elastic recoil detection (ERD), and Rutherford backscattering spectrometry (RBS) verified optical bandgap widening, layer densification, and an increase of the refractive index at higher substrate temperatures. The microstructure of a-SiC x N y :H z thin films was determined by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The substrate temperature strongly affected the binding state of all atoms, and in particular, carbon atoms attached to silicon and nitrogen, as well as hydrogen-terminated bonds. We correlated the films' microstructural changes to a higher species' mobility arriving on the growin layer at higher temperatures. Photoluminescence (PL) measurements showed that the total intensity of visible light emission increased. A systematic blueshift of the centroid of the wide PL peak was observed following the increase of optical gap. 2 This is a consequence of their unique properties inherited from the combined properties of binary substructures, silicon carbide (SiC), silicon nitride (SiN), and carbonitride (CN). On the one hand, the durability and hardness of SiN structures cannot compete with those of carbon-based hard counterparts such as diamond-like carbon (DLC), CN, and SiC materials.3 On the other hand, carbon-based films do not offer the required properties for current optical designs, 4 while SiN thin films have been considered as the basis for several optoelectronic devices. 5 The protective properties of SiC x N y materials appear as an intermediate matrix to meet the demands in hard coating technology and concurrently, the tunability of SiC x N y 's electrical and optical properties raises its interest in the field of Photonics. SiC x N y structures have appeal to researchers for wear-resistant 6 and corrosion-resistant coatings, 7 and recently, for silicon-based anode materials in lithium ion batteries. 8 In addition, SiC x N y structures are used for gate dielectrics in thin film transistors 9 and diffusion barriers.10 They appear to broaden the optical parameter space required for the application of ultraviolet (UV) detectors 11,12 and the passivation layer in the third generation "all-silicon" tandem solar cells. 13,14 To this end, Chen et al. reported a direct bandgap of 3.8 eV for c-Si 2 N 4 C 15 and Azam et al. 16 investigated the tunability of the bandgap depending on the dominant phase present in the SiC x N y layer. We previously showed that the visible photoluminescence (PL) emission from ...

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“…Silica-based membranes are classically prepared by the sol-gel process or by CVD-based methods. Oxycarbide, carbo-nitride and silicon carbide membranes can be obtained by CVD 59,61,62 or calcination of silicon-based polymers (polymer derived ceramics method). [63][64][65] The implementation of ordered or crystalline nanomaterials with controllable micro/mesopores and nanochannels in membranes -such as metal organic frameworks (MOFs), [66][67][68] zeolites, 69 carbon molecular sieves (CMS), 70,71 carbon nanotubes (CNTs) 72,73 or 2D materials (graphene and graphene oxide, BN, MoS2) [74][75][76] -is gaining a lot of attention because of their high potential for molecular separations, but their use is hindered because of integration challenges at industrial scale.…”

Section: Membranes and Current Challengesmentioning

confidence: 99%

Atomic Layer Deposition for Membranes: Basics, Challenges, and Opportunities

et al. 2018

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Atomic layer deposition (ALD) is a technology offering the possibility to prepare thin films of high quality materials on high aspect ratio substrates with precise thickness control, high uniformity and excellent conformality, a unique capability. Therefore, this route is particularly suited for the structural modification and pore tailoring of synthetic membranes. ALD coatings have been prepared on a wide variety of membrane substrates, from inorganic templated supports to porous polymers. This minireview aims to provide an extensive summary of the advances of ALD applied to membranes. A selected list of studies will be used to illustrate how the ALD route can be implemented to improve the operational performance of different inorganic, organic, hybrid or composite membranes. Furthermore, the challenges and opportunities of the route for this specific membrane application are also discussed. This work comprehensively shows the benefits of ALD and its application in various facets of membranes and membrane associated engineering processes, and will help exploiting the numerous prospects of this emerging and growing field.

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Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

Cited by 12 publications

References 34 publications

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Atomic Layer Deposition for Membranes: Basics, Challenges, and Opportunities

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