Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation

Rathi, Servin; Gupta, Mridula; Gupta, R. S.

doi:10.1016/j.spmi.2010.03.003

Cited by 11 publications

(3 citation statements)

References 30 publications

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“…6 shows the sub‐threshold behaviour of both devices. It shows that single‐gate MOS‐HEMT has poor subthreshold characteristics as compared to double‐gate MOS‐HEMT due to poor restrain to SCE [31].…”

Section: Resultsmentioning

confidence: 99%

“…It shows that the double‐gate structure has a higher ON current as compared to a single‐gate structure. The primary cause responsible for high ON current in the double‐gate structure is due to the low interface scattering and hence higher average velocities in the channel resulting in higher drain current density [31]. The TCAD device simulation results of single‐gate GaN MOS‐HEMT having the same gate length (0.5 µm) of the available fabricated device is calibrated as shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Panda

Singh

Lenka

et al. 2020

IET Circuits, Devices & Systems

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Panda

Singh

Lenka

et al. 2020

IET Circuits, Devices & Systems

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“…When N + D is fixed, no matter how thick the In 0.53 Ga 0.47 As channel layer is, the total amount of electrons diffused from the In 0.52 Al 0.48 As doping layer into the In 0.53 Ga 0.47 As channel layer is the same under thermal equilibrium state. However, known from the previous publications on HEMTs, 38,39) the channel layer thickness T c has a close influence on the concentration of 2DEG in the In 0.53 Ga 0.47 As channel layer, therefore it is imperative to investigate the effect of T c on the device performance of JL-TFET.…”

Section: Influence Of Channel Layer Thickness On Jl-tfetmentioning

confidence: 99%

An In_0.53Ga_0.47As/In_0.52Al_0.48As/In_0.53Ga_0.47As double hetero-junction junctionless TFET

Yang

Zhang

et al. 2021

Jpn. J. Appl. Phys.

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In this paper, an In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless tunnel field-effect transistor (JL-TFET) is proposed, whose N+-channel is formed through the two-dimensional electron gas (2DEG) generated by the hetero-junction without directly implementing physical doping. It can not only effectively suppress the random dopant fluctuation in traditional JL-TFET, but also solve the problem that the electron tunneling is hindered by the wide tunneling barrier at the tunneling junction in conventional dopingless TFET. The existence of 2DEG at the source/channel junction for the proposed JL-TFET can decrease the lateral tunneling distance and enlarge the energy range for tunneling, thereby promoting the device performance. Investigations on effects of the thickness of channel layer (T c), the N-type doping concentration (N+D) in doping layer, and the gate dielectric on JL-TFET demonstrate that the optimal device characteristics can be obtained when T c = 2 nm, N+D = 1 × 1019 cm−3, and the high-K dielectric is adopted.

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Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

Poornachandran¹,

Mohankumar²,

Kumar

et al. 2019

Int J Numerical Modelling

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This paper gives a comprehensive detail about an emerging InAs high electron mobility transistor (HEMT) technology with proper material combination making it suitable for low-power and high-frequency applications. Over the decade, various material combinations were adopted to improve the sheetcarrier density and frequency performances. In this work, we report the performance and optimization of 30-nm gate length InAs-based dual channel double gate (DCDG) HEMT for terahertz application. The dual channel is formed in the device due to the combination of five layers (In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/ InAs/In 0.7 Ga 0.3 As) and thus provides a significant improvement in drain current and transconductance. Moreover, the gate scaling with optimized gate to drainside recess length of gate (L rd ) leads to reduced parasitic (C gg ) and tremendously increases the RF performance metrics f max and f T . For this device, high drain current of 2.203 mA/μm with peak transconductance of 4.77 mS/μm is observed. Further optimization of L rd results in peak f T of 810 GHz and f max of 900 GHz at a drain source voltage V ds = 0.5 V. These parameters empower a feasibility of the device for submillimeter as well as terahertz applications.

show abstract

Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation

Cited by 11 publications

References 30 publications

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

An In_0.53Ga_0.47As/In_0.52Al_0.48As/In_0.53Ga_0.47As double hetero-junction junctionless TFET

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications

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Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation

Cited by 11 publications

References 30 publications

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

An In0.53Ga0.47As/In0.52Al0.48As/In0.53Ga0.47As double hetero-junction junctionless TFET

Sheet‐carrier density and I‐V analysis of In0.7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications

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An In_0.53Ga_0.47As/In_0.52Al_0.48As/In_0.53Ga_0.47As double hetero-junction junctionless TFET

Sheet‐carrier density and I‐V analysis of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As dual channel double gate HEMT for THz applications