Microwave ponderomotive forces in solid-state ionic plasmas

Booske, John H.; Cooper, R. F.; Freeman, S. A.; Rybakov, K. I.; Semenov, V. E.

doi:10.1063/1.872835

Cited by 95 publications

(63 citation statements)

References 18 publications

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“…It is well established that reaction kinetics in certain materials are enhanced when high frequency electric fields are present. [4] Future experiments are planned to examine this possibility.…”

Section: Resultsmentioning

confidence: 99%

“…Besides the rapid ramp rates and precise control over final temperature (through control of the input power), it is speculated that the presence of intense electric fields during the annealing process may provide an additional driving force for dopant activation. Such a force has been shown to exist elsewhere, for example in the transport of ions during microwave processing of ceramics [4].…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic annealing for the 100 nm technology node

Thompson

Booske

Gianchandani

et al. 2002

IEEE Electron Device Lett.

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Abstract-Electromagnetic induction heating (EMIH) is a novel rapid thermal processing technique that uses microwave and radio frequency (RF) radiation to directly heat silicon wafers. Heating rates of 125 C/s have been achieved and 75 mm diameter wafers have been heated above 1000 C using only 950 W of power. EMIH has been used to activate shallow implanted dopants with minimal diffusion of the junction depth. It is speculated that the exposure of the wafer to intense electric fields during the anneal may provide an additional driving force for dopant activation, allowing for higher activation at lower temperatures. Post-anneal junction depths less than 25 nm with sheet resistances between 700 and 1000 ohms/square have been achieved without the use of a controlled low oxygen ambient. The EMIH Rs-Xj curve penetrates the SE-MATECH 100 nm technology box and with further optimizations may satisfy the 70 nm technology node.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electromagnetic annealing for the 100 nm technology node

Thompson

Booske

Gianchandani

et al. 2002

IEEE Electron Device Lett.

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“…Rigid theoretical description on the non-thermal effect has been given in the references. [14][15][16][17] 3. Application of Millimeter-wave Heating to Smart Materials Synthesis…”

Section: Characteristics Of Millimeter-wave Heatingmentioning

confidence: 99%

Characteristics of Millimeter-wave Heating and Smart Materials Synthesis

Makino

2007

ISIJ Int.

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Characteristics and advantages of heating processing based on millimeter-wave are described from the standpoint of the interaction between electromagnetic energy and solid materials. High capabilities of the electromagnetic processing are indicated by exemplifying several successful results such as sintering of alumina and AlN and post-annealing of aerosol-deposited PZT films. In these examples, it is shown that well-characterized properties such as high thermal conductivity and high bending strength are obtained by the inherent effect in the millimeter-wave processing. In the millimeter-wave processing, high thermal conductive AlN with over 210 W/(m · K) can be synthesized by rapid sintering at lower temperature, compared with the conventional method. Suppression of the interfacial reaction between PZT film and substrate steel can also be attained using the millimeter-wave processing. It is explained that the high capabilities of applying millimeter-wave processing to smart materials synthesis originates from the non-thermal effects due to high frequency field of millimeter-wave.KEY WORDS: millimeter-wave; microwave effect; ponderomotive force; multi-phonon; enhanced mass transfer; rapid densification; selective heating. ISIJ International, Vol. 47 (2007), No. 4, pp. 539-544 Review(ii) easier injection of high powder, (iii) easier designing of compact applicator, (xi) suppression of local overheating (thermal runaway) due to the less temperature dependence of dielectric loss. Further, stable heating can be attained in the composite materials even if selective heating arises from the difference of dielectric losses in constitutional materials.In the heating of materials by microwave, dielectric loss, eЉ(w), is the important factor and can be divided into three factors due to ionic conduction, electric dipole and phonon in the following;where e c Љ(w), e d Љ(w) and e Љ ph (w) are the dielectric loss contributed by ionic conduction, electric dipole and phonon. In an ionic crystal having cation and anion vacancies eЉ(w) can be expressed by the following equation 2,11) ;....... (2) where where e(0), e(∞) and t i are the dielectric losses at zero and infinite frequencies and relaxation time, respectively.The term of eЉ ph (w) is generated from multi-phonon process, which is one of the non-thermal effects, and becomes important in the millimeter-wave and far-infrared regions. In an ionic crystal with low concentration of vacancies, however, the multi-phonon process is also the important mechanism for the absorption of microwave energy in the range from 2 to 20 GHz. According to Sparks et al., (4) where w f and G are the resonant frequency of fundamental reststrahrent transverse phonon mode and relaxation velocity coefficient, respectively.Influence of vacancy concentration on the dielectric loss eЉ(w) has been indicated by examining the dependence of eЉ(w) on the microwave frequency in NaCl single crystals with different vacancy concentration.11) In the temperature range below about 500 K, the difference in the v...

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“…17,33,34 When the loss factor includes the effects of both conduction and polarization it is called an effective loss factor. The effective loss factor representing all loss mechanisms in extrinsic silicon is shown as follows:…”

Section: Microwave Heating Of Ion-cut Materialsmentioning

confidence: 99%

Microwave enhanced ion-cut silicon layer transfer

Thompson¹,

Alford²,

Mayer³

et al. 2007

Journal of Applied Physics

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Polycrystalline silicon layer transfer by ion-cut Appl. Phys. Lett. 82, 1544Lett. 82, (2003 Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation.

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Microwave ponderomotive forces in solid-state ionic plasmas

Cited by 95 publications

References 18 publications

Electromagnetic annealing for the 100 nm technology node

Electromagnetic annealing for the 100 nm technology node

Characteristics of Millimeter-wave Heating and Smart Materials Synthesis

Microwave enhanced ion-cut silicon layer transfer

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