Microwave switches based on 4H-SiC p-i-n diodes

Bludov, A.V.; Болтовец, Н. С.; Vasilevskii, K. V.; Zorenko, A. V.; Zekentes, K.; Krivutsa, Valentyn A.; Kritskaya, T. V.; Лебедев, А. А.

doi:10.1134/1.1666959

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…Nevertheless, the fabricated switcher with 4H-SiC p + -n-n + diode demonstrated a satisfactory operation at frequencies of 1 and 3 GHz which was in very accurate agreement with diode and switcher models. 38 Further improvement of 4H-SiC p-i-n diode characteristics can be easily achieved by use of epitaxial structure with low doping level which are commercially available. 42 This will allow the reduction of punch-through voltage for the diode and increase of breakdown voltage whilst maintaining /-layer thickness.…”

Section: Silicon Carbide P-i-n Diodementioning

confidence: 99%

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Silicon Carbide Diodes for Microwave Applications

Vassilevski

2005

Int. J. Hi. Spe. Ele. Syst.

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Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

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Section: Silicon Carbide P-i-n Diodementioning

confidence: 99%

“…Microwave characteristics of microstrip switcher with 4H-SiC p*-n-n* diode measured at frequencies 1, 3, and 10 GHz 38. (a) -isolation losses depending on forward current bias; (b) -transmission losses depending on reverse voltage bias.…”

mentioning

confidence: 99%

Silicon Carbide Diodes for Microwave Applications

Vassilevski

2005

Int. J. Hi. Spe. Ele. Syst.

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“…Moreover, a SiC p-i-n diode could dissipate substantially higher thermal power than a similar Si diode. Indeed, 4H-SiC p-i-n diode based single-pole single-through (SPST) switches [1,2] and limiters [3] as well as IMPATT oscillators [4] have been demonstrated inciting industrial interest [5].…”

Section: Introductionmentioning

confidence: 99%

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Zekentes¹,

Basanets

Boltovets

et al. 2008

MSF

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Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.

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“…Therefore, a SiC p-i-n diode could dissipate higher thermal power than a similar Si one. In previous papers [1][2][3] we have demonstrated the suitability of 4H-SiC diodes for microwave applications by demonstrating switches and modulators based on these diodes. In this paper, new measurements on the same diodes as well as on new diodes with improved breakdown characteristics are reported.…”

Section: Introductionmentioning

confidence: 99%

Microwave p-i-n Diodes and Switches Based on 4H-SiC

Zekentes

Camara

Romanov

et al. 2007

MSF

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4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 &, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, exhibited insertion loss 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns.

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Microwave switches based on 4H-SiC p-i-n diodes

Cited by 9 publications

References 2 publications

Silicon Carbide Diodes for Microwave Applications

Silicon Carbide Diodes for Microwave Applications

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Microwave p-i-n Diodes and Switches Based on 4H-SiC

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