Mid-infrared GaAs/AlGaAs micro-ring resonators characterized via thermal tuning

Abstract

Micro-ring resonators with a decoupling waveguide have been fabricated from thin-film GaAs/Al0.2Ga0.8As waveguides accommodating mid-infrared wavelengths, and were characterized in detail via thermal tuning.

MXene V2C-coated runway-type microfiber knot resonator for an all-optical temperature sensor

“…Strictly speaking, the ratio of the wavelength of the resonance peak to the full wave at half maximum (FWHM) is a measure of the Q factor only if the FWHM is much smaller than the FSR. 38 We deviate from this condition by using this ratio to measure the Q factor, which results in a relatively small Q factor. Fig.…”

A thermoelectrically stabilized aluminium acoustic trap combined with attenuated total reflection infrared spectroscopy for detection of Escherichia coli in water

“…hyperspectral imaging). In addition, the recently reported possibility of performing antibody labelling with the assistance of ultrasound particle manipulation on a chip, 25 combined with on-chip mid-IR sensing 51,52 points to possibly automating the overall sample handling scheme, including antibody labelling, in addition to indicating room for further miniaturization. Mid-IR sensing in general holds the potential for label-free sensing by either directly measuring bacteria or their intrinsic β-D-galactosidase or β-D glucuronidase enzyme activity.…”

Ultrasonic‐Assisted Electrochemical Nanoimprint Lithography: Forcing Mass Transfer to Enhance the Localized Etching Rate of GaAs

“…Benefiting from their reduced feature size, high integration level and superior electrical and optical performance, semiconductor functional devices with three-dimensional micro/nanostructures (3D-MNSs) have attracted widespread attention across various fields such as microelectromechanical systems (MEMS), photovoltaics, optical metasurfaces, waveguides and micro lightemitting diodes (Micro LEDs). [1][2][3][4][5][6] In the advanced manufacturing industry, the direct fabrication of 3D-MNSs with high throughput and high reliability directly on semiconductor wafers holds paramount importance. [7][8] Although the existing semiconductor manufacturing process based on photolithography and etching techniques has achieved notable commercial success, the accuracy limitation determined by the wavelength of the exposure light source and the lattice defects due to dry etching lead to increasing the manufacturing costs and decreasing the device performance.…”