Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

Abstract

InAs0.79Sb0.21-based nBn photodetectors were fabricated on a GaAs substrate, using the interfacial misfit array growth mode. Reductions in the dark current density of more than two orders of magnitude at 300 K and more than six orders of magnitude at 200 K were found, in comparison with an InAs0.87Sb0.13 p-i-n diode. At −0.5 V applied bias, the dark currents were found to be diffusion limited above 150 K. Background limited infrared photodetection and R0A values in excess of 106 Ωcm2 were observed at 150 K. Spectral response measurements revealed a cut-off wavelength of 5.3 μm at 200 K.

Performance comparison of barrier detectors and HgCdTe photodiodes

“…Using the HgCdTe benchmark known as Rule 07, we compare the experimental data for barrier detectors with a simple empirical relationship that describes the dark current behavior of HgCdTe photodiodes with temperature and wavelengths. [17][18][19][20][21] The cut-off wavelength was taken as the point of a 50% response. Figure 5 shows the dark current density in MWIR barrier detectors published in the literature for comparison with Rule 07.…”

Reprint of “Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – grown on GaAs, using an interfacial misfit array, and on native GaSb”

“…Further examples of barrier infrared detectors include dual band nBn designs -where absorption layers with different bandgaps are positioned on either side of the barrier layer, allowing bias polarity dependent wavelength selection -and complementary barrier designs, where tuneable superlattice band offsets are exploited to create barriers blocking dark currents due to both carrier types [6]. In spite of the above noted advances in superlattice-based nBn designs, bulk-material nBn detectors can often offer superior quantum efficiencies and several reports already exist of InAsSb-based nBn detectors grown on GaAs using interfacial misfit (IMF) arrays [7,8]. The IMF growth mode allows material of good crystalline quality to be deposited, ''buffer-free'', onto lattice-mismatched substrates [9].…”

Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

“…Recently, antimonide-based photodetectors have been grown on a GaAs substrate by molecular beam epitaxy (MBE) and reported to have comparable performance to the devices grown on more expensive InSb and GaSb substrates [8][9][10]. In addition to providing a cost saving substrate, GaAs can be used as a functional material to fabricate transistors and realize an addressing circuit for the photodetectors.…”