Mid-infrared laser emission from Fe:ZnSe cladding waveguides

Lancaster, Adam; Cook, Gary; McDaniel, Sean A.; Evans, Jonathan W.; Berry, Patrick A.; Shephard, Jonathan D.; Kar, A. K.

doi:10.1063/1.4927384

Cited by 28 publications

(17 citation statements)

References 24 publications

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“…Fig. 9 (c) shows the dispersion of GeTe 4 and ZnSe and the effective indices of GeTe 4 waveguide on ZnSe, for the TE and TM polarizations. Fig.…”

Section: Appendixmentioning

confidence: 99%

“…Fig. 9 (b) shows the fundamental mode field for a 2 µm thick GeTe 4 waveguide on Si at a wavelength of 3.5 µm. Fig.…”

Section: Appendixmentioning

confidence: 99%

“…The waveguide core was approximated as a slab waveguide. The refractive index dispersion of GeTe 4 and ZnSe determined by ellipsometry [35], and the dispersion and absorption of Si from literature [36] were used in the model. The waveguide core thickness, a c , was taken to be 2 µm, to achieve guidance throughout the MIR spectral window.…”

Section: Appendixmentioning

confidence: 99%

“…It has useful electronic properties such as a wide and direct bandgap, low electrical resistivity and n-type conductivity. The important optical properties such as broad transparency from visible to mid infrared (MIR) wavelengths, high refractive index, low dispersion and high photosensitivity combined with electronic properties have been exploited in many optoelectronic devices such as LEDs, laser diodes, MIR sources, solar cells [1][2][3][4][5] and optical windows, lenses and prisms. Low-loss waveguides have been realized in ZnSe substrates by methods such as diamond dicing [6], laser writing [7], proton implantation [8] and a macroscopic Fourier transform infrared-attenuated total reflection (FTIR-ATR) waveguide element has been used for the detection of DNA hybridization [9].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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Zinc Selenide (ZnSe) is a promising mid-infrared waveguide material with high refractive index and wide transparency. Optical quality ZnSe thin films were deposited on silicon substrates by RF sputtering and thermal evaporation, and characterized and compared for material and optical properties. Evaporated films were found to be denser and smoother than sputtered films. Rib waveguides were fabricated from these films and evaporated films exhibited losses as low as 0.6 dB/cm at wavelengths between 2.5 µm and 3.7 µm. The films were also used as isolation/lower cladding layers on Si with GeTe 4 as the waveguide core and propagation losses were determined in this wavelength range.

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“…Fig. 9 (c) shows the dispersion of GeTe 4 and ZnSe and the effective indices of GeTe 4 waveguide on ZnSe, for the TE and TM polarizations. Fig.…”

Section: Appendixmentioning

confidence: 99%

“…Fig. 9 (b) shows the fundamental mode field for a 2 µm thick GeTe 4 waveguide on Si at a wavelength of 3.5 µm. Fig.…”

Section: Appendixmentioning

confidence: 99%

Section: Appendixmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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show abstract

“…Ultrafast Laser Inscription (ULI) has previously been shown to be a viable technique for decreasing the size of TM lasers [30] [31]. In order to understand how ultrashort pulses interact with a medium, it is necessary to understand how light propagates in the dielectric medium.…”

Section: Chapter II Backgroundmentioning

confidence: 99%

Mid-IR Ultrafast Laser Inscribed Waveguides and Devices

McDaniel

Thorburn

Liebig

et al. 2019

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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MID-IR ULTRAFAST LASER INSCRIBED WAVEGUIDES AND DEVICES Name: McDaniel, Sean A. University of Dayton Advisor: Dr. Gary Cook Ultrafast laser inscription (ULI) is a highly versatile technique for creating index modifications in glasses and crystalline materials. The process of ULI relies on ultrashort laser pulses focused inside of a material. The high intensity of the pulsed beam induces nonlinear absorption processes, which transfers the pulse energy to the material lattice. With careful experimental control of the laser parameters, a permanent change in the refractive can be obtained in the bulk material. The permanent refractive index change obtained by ULI can be used to create waveguides in active laser materials, such as Cr:ZnSe, Fe:ZnSe and Ho:YAG.Transition metal and rare-earth laser sources have been shown to operate over the 2 − 5 µm range. ULI can be used in conjunction with these materials to produce high power, guided-wave structures with reduced size, weight and power (SWaP) requirements. Power levels for Cr:ZnSe and Fe:ZnSe have been scaled to > 5 W and > 1 W respectively in ULI waveguide devices.Additionally, the first Ho:YAG ULI laser has been investigated, exhibiting output powers of ≈ 2 W .In addition to these advances, the theoretical limit for transition metal waveguide lasers was investigated. Transition metal lasers are highly sensitive to the operating temperature of the laser device. If the temperature increase induced in the sample is too high, phonon assisted transitions iii become dominant, thus decreasing the performance of the laser. Laser rate-equations and a thermal model for ULI waveguides were developed to establish a theoretical limit to ULI waveguide operation.Finally, several advancements were made with respect to creating ULI waveguides. An algorithm was developed for creating arbitrary ULI structures from computer generated models. The ability to create arbitrarily generated structures provides the ability to create complex structures using ULI, such as splitters, couplers, and photonic lanterns. Furthermore, a new helical inscription technique was devised for creating smooth index profiles and for creating Bragg structuring. iv ACKNOWLEDGMENTS

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Investigations of Nanoscale Defects in Crystalline and Powder ZnSe Doped With Fe for Laser Application

Гаврищук

Zykova

Mozhevitina

et al. 2017

Physica Status Solidi (a)

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The theoretical and experimental analysis of the ternary system Zn-Se-Fe for obtaining new fundamental information on phase using X-ray analysis and inductively coupled plasma mass-spectrometry is carried out. New experimental data of isothermal annealing in the Zn-Se-Fe system at the temperatures 730, 814, 1073 K by X-ray studies confirms the reliability of theoretical isothermal sections. The information on Fe solubility and concentrations of native point defects of atomic scale at bi-and monovariant conditions at 1073 and 1273 K have been carried out. Taking into account the new data on phase equilibria, it is possible to fabricate active ZnSe:Fe 2þ elements to create an effective laser operating at the temperature of 300 K with 1.52 Joule emission energy with efficiency of %50% relative to the absorbed energy.

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Mid-infrared laser emission from Fe:ZnSe cladding waveguides

Cited by 28 publications

References 24 publications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mid-IR Ultrafast Laser Inscribed Waveguides and Devices

Investigations of Nanoscale Defects in Crystalline and Powder ZnSe Doped With Fe for Laser Application

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