Mid-infrared optical absorption in InAs/AlSb/GaSb based quantum well system

Wei, Xiaojun; Wang, Weiyang; Fang, Jie; Rui, Hebing

doi:10.1016/j.physe.2019.113801

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…Since the InAs/GaAs QWIP had the “g-r” (generation-recombination) noise caused by the combination of electrons and holes, Xiangfei Wei et al optimized the InAs/GaSb quantum well structure by adding an AlSb cap layer in 2020 [ 28 ], which effectively reduced the “g-r” noise generated by the combination of electrons and holes ( Figure 2 d). When the width of the AlSb film reached 2 nm, the optical transitions of carriers in different material layers were significantly reduced, and thus the “g-r” noise could be reduced, and the detector worked well at room temperature.…”

Section: Infrared Photodetectors Based On Intraband Transitionmentioning

confidence: 99%

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The Historical Development of Infrared Photodetection Based on Intraband Transitions

et al. 2023

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The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including ‘bottom to up’ devices such as quantum well devices based on the molecular beam epitaxial approach, as well as ‘up to bottom’ devices such as colloidal quantum dot devices based on the chemical synthesis.

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Section: Infrared Photodetectors Based On Intraband Transitionmentioning

confidence: 99%

“…( d ) Ground−state wave functions for electrons and holes at different widths of AlSb. The solid line represents functions at widths of 0 nm and the dashed line represents functions at widths of 2 nm [ 28 ]. Copyright 2020, Physica E: Low−dimensional Systems and Nanostructures.…”

Section: Infrared Photodetectors Based On Intraband Transitionmentioning

confidence: 99%

The Historical Development of Infrared Photodetection Based on Intraband Transitions

et al. 2023

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“…Bolometers have been widely adopted for detecting infrared (IR) radiation for a variety of applications including thermal imaging, astronomy, health care, and security. A key advantage of the bolometers is that they can work at room temperature without cooling, [ 1–7 ] which has been a major limitation for cooled photodetectors based on low bandgap semiconductors such as HgCdTe, [ 8–11 ] II–VI and III–V semiconducting superlattices, [ 12–17 ] and quantum wells, [ 18–24 ] to reduce the dark current and enhance the signal‐to‐noise ratio. As bolometers measure the resistance change (Δ R ) caused by temperature variation (Δ T) under the infrared illumination, high temperature coefficient of resistance (TCR) of the bolometer materials is critical.…”

Section: Introductionmentioning

confidence: 99%

Ternary FePSe₃ Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Gan

et al. 2021

Adv Materials Inter

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The semiconducting metal phosphorus trichalcogenides (MPX3, X = S, Se), a new family of layered atomic materials similar to the transition‐metal dichalcogenides, have recently attracted great attention owing to their 2D magnetic properties as well as their wide range of tunable bandgaps, which can lead to promising applications in spintronic and optoelectronic devices. Herein, an uncooled bolometer based on FePSe3 atomic layers is reported, on which a competitive temperature coefficient of resistance (TCR) of ≈−2.96% K−1 at room temperature is observed. In detecting infrared radiation (980–1550 nm) at room temperature using the FePSe3 bolometer, high responsivity exceeding 108 V W−1 and specific detectivity up to 109 Jones are achieved, which can be attributed to the combined advantages of the competitive room‐temperature TCR and natural thermal isolation between the inner layers of FePSe3 and the environment. This result reveals a remarkable property of FePSe3 atomic layers and paves the way toward new types of bolometers with high sensitivities.

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Opto‐Electronic Properties of Gap_1‐xSb_x Alloys for IR Applications

Chaudhary,

Rathi,

Singh

2024

Cryst. Res. Technol.

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The full potential linearized augmented plane wave (FP‐LAPW) method is used to compute structural, electronic, and optical properties of III‐V semiconductor ternary alloys GaP1‐xSbx (0≤x≤1) using first‐principle calculations within density functional theory. To calculate the ground state parameters of the structure, the energy exchange‐correlation Wu‐cohen generalized gradient approximation is employed in the wiek2k program. The Tran–Blaha‐modified Becke–Johnson (TB‐mBJ) pseudopotential is employed in addition to the Wu‐Cohen generalised gradient approximation to achieve a precise bandgap. After this, WC‐mBJ is used to examine optical properties such as real and imaginary parts of the dielectric constant, and energy loss. This study illustrates the nonlinear dependency on the various Sb compositions by examining the composition impacts on the bandgap, bulk modulus, and lattice constant. Using WC‐mBJ, the estimated band structures for alloys GaP0.75Sb0.25, GaP0.50Sb0.50, and GaP0.25Sb0.75 show direct energy bandgaps of 2.008 eV (617 nm), 1.482 eV (836 nm), and 1.055 eV (1174 nm), respectively. As a result, this material system has enormous potential for use in applications spanning the visible to infrared spectrum.

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Mid-infrared optical absorption in InAs/AlSb/GaSb based quantum well system

Cited by 4 publications

References 29 publications

The Historical Development of Infrared Photodetection Based on Intraband Transitions

The Historical Development of Infrared Photodetection Based on Intraband Transitions

Ternary FePSe₃ Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Opto‐Electronic Properties of Gap_1‐xSb_x Alloys for IR Applications

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Mid-infrared optical absorption in InAs/AlSb/GaSb based quantum well system

Cited by 4 publications

References 29 publications

The Historical Development of Infrared Photodetection Based on Intraband Transitions

The Historical Development of Infrared Photodetection Based on Intraband Transitions

Ternary FePSe3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Opto‐Electronic Properties of Gap1‐xSbx Alloys for IR Applications

Contact Info

Product

Resources

About

Ternary FePSe₃ Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Opto‐Electronic Properties of Gap_1‐xSb_x Alloys for IR Applications