In this paper, we investigate an intraband mid-infrared photodetector based on HgSe colloidal quantum dots (CQDs). We study the size, absorption spectra, and carrier mobility of HgSe CQDs films. By regulating the time and temperature of the reaction during synthesis, we have achieved the regulation of CQDs size, and the number of electrons doped in conduction band. It is experimentally verified by the field effect transistor measurement that dark current is effectively reduced by a factor of 10 when the 1Se state is doped with two electrons compared with other doping densities. The HgSe CQDs film mobility is also measured as a function of temperature the HgSe CQDs thin film detector, which could be well fitted by Marcus Theory with a maximum of 0.046 ± 0.002 cm2/Vs at room temperature. Finally, we experimentally discuss the device performance such as photocurrent and responsivity. The responsivity reaches a maximum of 0.135 ± 0.012 A/W at liquid nitrogen temperature with a narrow band photocurrent spectrum.

To simulate the crystal morphology of β-HMX crystallized in the presence of different polymer additives in the solution, a modified attachment energy model was used to simulate the crystal morphology of β-HMX recrystallized in PVA-DMSO solution when the mass fractions of PVA were 0.5%, 1%, 3%, 5%, and 10%, respectively. When the mass fraction of additive was 10%, the simulation results were in good agreement with the experiment. Molecular dynamics simulations were performed on the solution systems of different types of polymer additives to predict the morphology of β-HMX crystals. In addition, the effect of water on the crystal morphology of β-HMX was studied, and the effect of additive PVA on the solute and solvent diffusion ability during crystal crystallization was studied. The simulation results have certain reference significance in the crystallization process of β-HMX under additive conditions.

The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including ‘bottom to up’ devices such as quantum well devices based on the molecular beam epitaxial approach, as well as ‘up to bottom’ devices such as colloidal quantum dot devices based on the chemical synthesis.

The internal defect is an important factor that could influence the energy and safety properties of energetic materials. RDX samples of two qualities were characterized and simulated to reveal the influence of different defects on sensitivity. The internal defects were characterized with optical microscopy, Raman spectroscopy and microfocus X-ray computed tomography technology. The results show that high-density RDX has fewer defects and a more uniform distribution. Based on the characterization results, defect models with different defect rates and distribution were established. The simulation results show that the models with fewer internal defects lead to shorter N-NO2 maximum bond lengths and greater cohesive energy density (CED). The maximum bond length and CED can be used as the criterion for the relative sensitivity of RDX, and therefore defect models doped with different solvents are established. The results show that the models doped with propylene carbonate and acetone lead to higher sensitivity. This may help to select the solvent to prepare low-sensitivity RDX. The results reported in this paper are aiming at the development of a more convenient and low-cost method for studying the influence of internal defects on the sensitivity of energetic materials.

1,1′-Dihydroxy-5,5′-bi-tetrazolium dihydroxylamine salt (TKX-50) is a new type of high-energy low-sense explosive with great application value, but TKX-50 made directly from the reaction has problems such as irregular crystal morphology and relatively large length-diameter, and these factors seriously affect the sensitivity of TKX-50 and limit its large-scale application. The internal defects of TKX-50 crystals have a great influence on their weakness, and studying its related properties is of great theoretical significance and application value. To further investigate the microscopic properties of TKX-50 crystals and to explore the connection between microscopic parameters and macroscopic susceptibility, this paper reports the use of molecular dynamics simulations to construct TKX-50 crystal scaling models with three types of defects—vacancy, dislocation and doping—and conducts molecular dynamics simulations. The influence of TKX-50 crystal defects on the initiation bond length, density, bonding diatomic interaction energy, and cohesive energy density of the crystal was obtained. The simulation results show that the models with a higher bond length of the initiator bond and higher percentage activated the initiator’s N-N bond and lowered the bond-linked diatomic energy, cohesive energy density, and density corresponding to higher crystal sensitivities. This led to a preliminary connection between TKX-50 microscopic model parameters and macroscopic susceptibility. The results of the study can provide a reference for the design of subsequent experiments, and the research method can be extended to the research work on other energy-containing materials.