Mid-infrared time-resolved photoconduction in black phosphorus

Suess, Ryan J.; Leong, Edward; Garrett, Joseph L.; Zhou, Tong; Salem, Reza; Munday, Jeremy N.; Murphy, Thomas E.; Mittendorff, Martin

doi:10.1088/2053-1583/3/4/041006

Cited by 59 publications

(58 citation statements)

References 43 publications

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“…Experimentally, many kinds of photodetectors based on BP have been reported, working either in the photoconductive or photovoltaic mode . Most of these focus on the visible range, with only a few focusing on the mid‐IR range.…”

Section: Optical Properties Of Anisotropic 2d Materialsmentioning

confidence: 99%

The Optical Properties and Plasmonics of Anisotropic 2D Materials

Wang

Zhang

Huang

et al. 2019

Advanced Optical Materials

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In the fast growing 2D materials family, anisotropic 2D materials, with their intrinsic in‐plane anisotropy, exhibit a great potential in optoelectronics. One such typical material is black phosphorus (BP), with a layer‐dependent and highly tunable bandgap. Such intrinsic anisotropy adds a new degree of freedom to the excitation, detection, and control of light. Particularly, hyperbolic plasmons with hyperbolic q‐space dispersion are predicted to exist in BP films, where highly directional propagating polaritons with divergent densities of states are hosted. Combined with a tunable electronic structure, such natural hyperbolic surfaces may enable a series of exotic applications in nanophotonics. Herein, the anisotropic optical properties and plasmons (especially hyperbolic plasmons) of BP are discussed. In addition, other possible 2D material candidates (especially anisotropic layered semimetals) for hyperbolic plasmons are examined. This review may stimulate further research interest in anisotropic 2D materials and fully unleash their potential in flatland photonics.

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Section: Optical Properties Of Anisotropic 2d Materialsmentioning

confidence: 99%

The Optical Properties and Plasmonics of Anisotropic 2D Materials

Wang

Zhang

Huang

et al. 2019

Advanced Optical Materials

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“…Because of the decent off‐state of BP transistors, their detectors were capable of detecting mid‐infrared light at picowatt level. Using time‐resolved measurements, Suess et al revealed the potential of black phosphorus in high‐speed mid‐infrared optoelectronics up to the band edge energy of 3.7 µm …”

Section: Black Phosphorus Photonicsmentioning

confidence: 99%

Progress on Black Phosphorus Photonics

Deng

Frisenda

et al. 2018

Advanced Optical Materials

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between light and graphene is weak, although it is extremely strong if normalized to its atomic thickness. [15,[20][21][22] Also, because graphene is semimetallic, the optoelectronic devices suffer from large dark current, and therefore high noise level and high power consumption. [23][24][25][26][27] The bandgaps of semiconducting transition metal dichalcogenides (TMDCs) are in general in the range of ≈1-2 eV, leading to limited optical response in technically critical infrared wavelength range. [15,28] Few-layer TMDCs, however, as long as they are thicker than monolayer, are no longer direct bandgap semiconductors. [29,30] Hexagonal-boron nitride (h-BN) has a bandgap of about 6 eV, therefore it is an insulator. [15,31] Black phosphorus provides an opportunity to cover the near and mid-infrared wavelength range. In its bulk form, black phosphorus has a bandgap of ≈0.3 eV. [2][3][4][5][6] This value increases as the thickness of BP thin film goes down, and finally reaches ≈2 eV for the monolayer due the vertical quantum confinement effect, which is a common phenomenon for many semiconducting layered materials. [9,32,33] It is also worth noticing that the bandgap is direct regardless of its thickness. [8,9] The finite bandgap is critical for electronic devices, since it ensures high on-off ratio for a transistor, [3] and significantly reduces dark current. [34] For optical applications, the 0.3 eV direct bandgap makes BP interact strongly with mid-infrared photons and those with even higher energy. [5] Moreover, it was discovered recently that the bandgap of thin-film BP can be efficiently tuned simply by an electrical gating approach, which may allow for the exploration of new physical phenomena and enable more device applications. [35][36][37][38][39][40][41] Another distinct feature of black phosphorus is the strong in-plane anisotropy, which originates from the puckered arrangement of phosphorus atoms (shown in Figure 1a). [5] This reduced symmetry results in specific optical transition rules in the momentum space and thus linear dichroic optical properties. [8,42] Due to these desirable properties, a few proof-ofconcept devices have been demonstrated with various functionalities. [3,[43][44][45][46][47][48][49][50] Toward the practical applications of BP, long-term stability is highly desirable. Although naked black phosphorus can oxidize under ambient environment, [7,51] researchers have developed a number of encapsulation and surface passivation schemes to dramatically improve its long term stability. [52][53][54][55][56] Large-scale controllable production of BP thin film is still at its infancy; nevertheless, encouraging progress is being continuously made. [57][58][59] In this review, we will also discuss the BP synthesis, since it is critical for future BP applications in photonics.Recent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP), an elemental group-V layered material with very high carrier mobility among all semiconducting layered materials. As a layer...

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“…In an optoelectronic autocorrelation measurement, the voltage drop across the resistive VO 2 channel is monitored as a function of time delay between two optical pulses. This approach directly links optical excitation to electrical properties, provides information about the intrinsic time scale of the IMT without the influence of external circuit parasitics, and is predominantly sensitive only to light absorbed in the film—an important measurement feature due to the small film–light interaction volume.…”

Section: Resultsmentioning

confidence: 99%

Ultrafast Phase Transition Dynamics in Strained Vanadium Dioxide Films

Suess

Bingham

Charipar

et al. 2017

Adv Materials Inter

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the material response. In the present work, an ultrafast optoelectronic autocorrelation technique is used to directly measure the dynamical electrical properties of epitaxially strained VO 2 across the IMT. This approach differs from purely optical methods, such as pump-probe measurements, where electrical properties of the material must be inferred from reflected or transmitted light. While the optoelectronic autocorrelation technique uses a combination of optical excitation and electrical sensing, the method differs significantly from purely electrical VO 2 switching measurements that use high-amplitude voltage pulses to initiate the IMT. Purely electrical switching experiments have a relatively low temporal resolution due to the electrical readout, which is typically limited to nanosecond time scales. [11][12][13][14] The findings reported here show it is possible to transiently induce an insulator-metal-insulator phase transition cycle over a time interval less than 400 fs with a measured change in signal spanning two orders in magnitude. These dynamics contrast those of relaxed VO 2 , which typically exhibits a prolonged metallic phase that persists for nanoseconds after pulsed optical excitation. [15,16] Isolating solely the role of strain is challenging as differences in film thickness and morphology may also influence the material response. Nevertheless, the ultrafast response observed in the strained film suggests it may be possible to selectively activate the metallic phase without inducing a change in crystalline structure. Our findings are discussed within the context of recent findings that report a suppressed structural phase transition (SPT) in strained VO 2 [10,17] as well as works that consider intermediate states that separate the IMT and SPT. [18,19] These results have promising implications for optical or optoelectronic devices where fast switching and modulation are required. Results and DiscussionThe films investigated in this work exhibit a temperaturedependent resistivity (Figure 1a) that demonstrates a clear IMT at a temperature, T IMT , of 341 and 296 K for relaxed and strained films, respectively. The relaxed films are oriented, single-phase VO 2 on c-cut Al 2 O 3 substrates and are used as a canonical material with a known electrical and SPT [3,4] against which the dynamical response of the strained films can be compared. The large shift in transition temperature for the strained film signifies the stabilization of the tetragonal phase due to the film adopting the lattice symmetry of the TiO 2 (001) substrate. [10] An ultrafast insulator-metal-insulator phase transition cycle in epitaxially strained vanadium dioxide films is observed. The films are characterized by optoelectronic autocorrelation measurements that reveal a 400 fs transient change in response spanning two orders in magnitude. These findings suggest a predominantly electronic mechanism and demonstrate the promise of this material for optoelectronic applications requiring fast, high-contrast switching.

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Mid-infrared time-resolved photoconduction in black phosphorus

Cited by 59 publications

References 43 publications

The Optical Properties and Plasmonics of Anisotropic 2D Materials

The Optical Properties and Plasmonics of Anisotropic 2D Materials

Progress on Black Phosphorus Photonics

Ultrafast Phase Transition Dynamics in Strained Vanadium Dioxide Films

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