Mid-IR Type-II Interband Cascade Lasers

Vurgaftman, I.; Bewley, W. W.; Canedy, C. L.; Kim, Chul Soo; Kim, Mijin; Lindle, J. R.; Merritt, Charles D.; Abell, J.; Meyer, J. R.

doi:10.1109/jstqe.2011.2114331

Cited by 96 publications

(60 citation statements)

References 47 publications

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“…This reduces the threshold current density (J th ) at the expense of a higher threshold voltage that must exceed Mħω/q, where M ( > 1) is the number of stages. Cascading reduces the threshold power density as long as there is a series resistance (or a non-ohmic voltage drop) 18 , and J th does not suffer appreciably from the introduction of the cascaded geometry. The cascading in a QCL also provides preferential injection into the upper lasing subband and fast extraction from the lower lasing subband 19 .…”

Section: Conventional and Cascaded Lasersmentioning

confidence: 99%

“…18), where m r * is the reduced density-of-states mass. When added to any carriers produced by extrinsic doping, the resulting electron and hole densities produce the QFL separation specified above.…”

Section: Icl Designmentioning

confidence: 99%

“…Both sets of QWs must be designed for consistency with the voltage-balancing condition, which differs considerably from design considerations for the QCL. A second role of the hole injector is to present a barrier to direct electron current flow that bypasses the VB 18,22 . Our analysis assumes that carrier thermalization on both sides of the SMIF is much faster than the carrier lifetime.…”

Section: Icl Designmentioning

confidence: 99%

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Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 µm to beyond 6 µm.

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Section: Conventional and Cascaded Lasersmentioning

confidence: 99%

Section: Icl Designmentioning

confidence: 99%

Section: Icl Designmentioning

confidence: 99%

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Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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“…In recent years, mid-infrared quantum well (QW) lasers have made significant progresses in reducing the threshold current density, increasing maximum working temperature and output power [2,3]. Moreover, the quantum cascade lasers (QCLs) and inter-band cascade lasers (ICLs), which make use of the inter sub-band transition, have achieved OPEN ACCESS superior performance [4,5]. However, these types of devices suffer from lower wall plug efficiency and higher turn-on voltages than QW lasers.…”

Section: Introductionmentioning

confidence: 99%

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Zhuang

Krier

2015

Photonics

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Abstract:In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm −1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

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“…For the wavelength range of interest, the dominant devices are type-I lasers based on quaternary GaInAsSb quantum wells (QWs) [4] and interband cascade lasers (ICLs) [5]. Both are based on the GaSb material platform.…”

Section: Introductionmentioning

confidence: 99%

InP-Based Type-II Quantum-Well Lasers and LEDs

Sprengel

Grasse

Wiecha

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and optically pumped lasers could be demonstrated beyond the wavelength limit for type-I InP-based lasers (∼2.3 μm). In this paper, we introduce the material system and device concepts, and report the latest achievements, such as electrically pumped lasing operation up to a wavelength of 2.6 μm in pulsed mode, continuous-wave resonant-cavity light-emitting diode operation up to a wavelength of 3.3 μm at 20-80 • C and photoluminescence even up to 3.9 μm.

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Mid-IR Type-II Interband Cascade Lasers

Cited by 96 publications

References 47 publications

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

InP-Based Type-II Quantum-Well Lasers and LEDs

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