Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

Schygulla, Patrick; Heinz, Friedemann D.; Dimroth, Frank; David, Laurent

doi:10.1109/jphotov.2021.3090159

IEEE J. Photovoltaics

2021

DOI: 10.1109/jphotov.2021.3090159

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Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

Patrick Schygulla

Friedemann D. Heinz

Frank Dimroth

et al.

Abstract: This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triplejunction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic vapor phase epitaxy. By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber band gap of 1.50 eV by up to 100 mV. In the future these r… Show more

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Cited by 4 publications

References 29 publications

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Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g

Schygulla,

Müller,

Höhn

et al. 2024

Progress in Photovoltaics

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In this work, we present the fabrication and analysis of a wafer‐bonded GaInP/GaInAsP//Si triple‐junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over previous III‐V//Si triple‐junction cells by the implementation of a rear‐heterojunction for the middle cell. Furthermore, an advanced metallodielectric rear‐side grating was used for light trapping enhancement in the silicon bottom cell that increased the silicon subcell current by 1.4 mA/cm2. The external radiative efficiency was quantified to be 1.5 times higher compared to a reference device with a GaInAsP homojunction middle cell. A luminescent coupling factor of 0.46 between the middle and bottom subcell was determined. The share of recombination in the space‐charge region was experimentally shown to be insignificant as intended by the rear‐heterojunction design. Overall, the open‐circuit voltage of the middle cell increased by 61 mV compared to the previous generation. Given the established long‐term stability of III‐V and silicon‐based solar cells, these results are promising steps towards the future employment of III‐V/Si tandem solar cells.

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Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g

Schygulla,

Müller,

Höhn

et al. 2024

Progress in Photovoltaics

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III-V material growth on electrochemically porosified Ge substrates

Winter

Schreiber

Schygulla

et al. 2023

Journal of Crystal Growth

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Preparation of UV Curable Optical Adhesive NOA81 Bionic Lotus Leaf Structure Films by Nanoimprint Technique and the Applications on Silicon Solar Cells

Zhang

et al. 2023

Coatings

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Front surface texturing is a common method used to improve the optical performance of photovoltaic devices. However, traditional texturing techniques may be challenging in some cases, such as when dealing with ultra-thin substrates. Textured polymer films on such devices would be an alternative approach. This paper reports a study of NOA81 thin films with a bionic lotus leaf surface structure on monocrystalline silicon solar cells. Inspired by the surface structure of natural lotus leaves, we successfully prepared a bionic lotus leaf microstructure film on the surface of solar cells based on NOA81 using polydimethylsiloxane (PDMS) polymer and nanoimprinting methods. Scanning electron microscopy (SEM) images showed that the surface structure of the NOA81 thin film was the same as that of natural lotus leaves. A UV-Vis spectrophotometer with an integrating sphere was used to measure the reflectance of the textured NOA81 film on the silicon wafer. Results showed that the textured NOA81 film could effectively reduce the reflectance of the silicon wafer surface. We also used finite-difference time-domain (FDTD) simulation to verify this conclusion further. Finally, the I-V characteristics of the prepared solar cells with the textured NOA81 film were investigated, and the highest photovoltaic efficiency was measured to be about 16.07%, effectively improving the photoelectric conversion efficiency. In addition, the film with textured NOA81 can be used as a protective film for monocrystalline silicon solar cells.

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Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

Cited by 4 publications

References 29 publications

Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g

Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g

III-V material growth on electrochemically porosified Ge substrates

Preparation of UV Curable Optical Adhesive NOA81 Bionic Lotus Leaf Structure Films by Nanoimprint Technique and the Applications on Silicon Solar Cells

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