Middle of line RC performance study at the 7 nm node

Fan, S.; Chen, James Hsueh-Chung; Kamineni, V.; Zhang, Xunyuan; Raymond, M.; Labelle, Cathy

doi:10.1109/iitc-amc.2017.7968960

Cited by 15 publications

(5 citation statements)

References 8 publications

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“…The resistivity of Ru [157] is comparable to that of Co in terms of 7 nm MOL critical dimensions. Both Ru and Co have better liner/barrier scalability compared to W. Susan Su-Chen Fanet al demonstrated Ru metallization assessment on 7 nm MOL with remarkable resistance reduction in the S/D contact and MOL local interconnect [158]. Table 3 summarizes some MOL Metallization Options [158].…”

Section: Beol For Nano-scale Transistorsmentioning

confidence: 99%

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Miniaturization of CMOS

Radamson

Zhang

et al. 2019

Micromachines

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When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

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Section: Beol For Nano-scale Transistorsmentioning

confidence: 99%

“…Moreover, the Co/CoTi x structure on SiO 2 /p-Si was investigated to evaluate its feasibility to replace conventional W/TiN/Ti structure of MOL in a future technology node [158,159,160]. An alloy of Co-20 at.%Ti is chosen as a single layer liner/barrier to replace Ti/TiN.…”

Section: Beol For Nano-scale Transistorsmentioning

confidence: 99%

Miniaturization of CMOS

Radamson

Zhang

et al. 2019

Micromachines

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“…The typical thickness of the TiN barrier layers is about 20 nm for existing >10 nm IC technology [8]. However, it will be necessary to reduce the thickness of barrier layers up to a few nanometers, due to the aggressive scaling of metal interconnects for sub-10 nm technology [9,10]. With significant progress in first-principles computational methods, it is now possible to accurately calculate the diffusion barrier of atomic species in solids [11].…”

Section: Introductionmentioning

confidence: 99%

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Dixit¹,

Konar²,

Pandey³

et al. 2017

J. Phys. D: Appl. Phys.

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In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium–nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

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“…[2][3][4][5] Replacing W middleof-the-line(MOL) local interconnects with cobalt metallization can optimize the MOL RC performance, the MOL resistance of the source/drain contacts and the local interconnect layer at the 7 nm node. 6 An increasing number of researchers focus their attention on cobalt CMP as barrier layer to copper interconnects. In order to obtain a higher removal rate of cobalt, some complexing agents or chelating agents are usually added to the slurry, such as glycine, citric acid, potassium oleateamino acids, amine organics etc.…”

mentioning

confidence: 99%

Effect of Diethanolamine as Corrosion Inhibitor for the Chemical Mechanical Polishing of Cobalt in H₂O₂ Based Slurry

Wang

et al. 2021

ECS J. Solid State Sci. Technol.

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In this article, we investigated the polishing effect of inhibitor diethanolamine (DEA) on cobalt under chemical mechanical polishing (CMP) in a slurry based on complexing agent ammonium sulfate ((NH4)2SO4). DEA is beneficial to inhibit the removal rate of cobalt and significantly reduce surface scratches of post-CMP cobalt in the AFM image. Through electrochemical experiments, the changes of corrosion current and corrosion potential with the increase of DEA concentration are obtained. The results show that by calculating the inhibition efficiency of DEA and the standard free energy of adsorption, the inhibition types of DEA can be determined as physical adsorption (main) and chemical adsorption. The XPS experiment analysis indicates that the chemisorption of DEA is to form a water-insoluble Co-DEA complex by complexing cobalt ions.Through the atomic force microscope to observe the surface condition of cobalt polished with/without EDA. Adding DEA in the slurry is beneficial to reduce the potential difference between Cu-Co and inhibit the galvanic corrosion between Cu-Co.

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Middle of line RC performance study at the 7 nm node

Cited by 15 publications

References 8 publications

Miniaturization of CMOS

Miniaturization of CMOS

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Effect of Diethanolamine as Corrosion Inhibitor for the Chemical Mechanical Polishing of Cobalt in H₂O₂ Based Slurry

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Middle of line RC performance study at the 7 nm node

Cited by 15 publications

References 8 publications

Miniaturization of CMOS

Miniaturization of CMOS

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Effect of Diethanolamine as Corrosion Inhibitor for the Chemical Mechanical Polishing of Cobalt in H2O2 Based Slurry

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Product

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About

Effect of Diethanolamine as Corrosion Inhibitor for the Chemical Mechanical Polishing of Cobalt in H₂O₂ Based Slurry