Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha Sankar; Rodriguez, J. B.; Krishna, S.

doi:10.1109/lpt.2007.908726

Cited by 21 publications

(14 citation statements)

References 12 publications

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“…Ability to heteroengineer the band structure of the T2SL devices stipulates realization of one more type of low-noise T2SL detectors, avalanche photodiodes (APDs) [119][120][121]. Control of individual layer thickness and composition offers great flexibility in engineering of the electron band structure to initiate single-carrier ionization.…”

Section: Proposed Solutions For the Improvement Of T2sl Detector Perfmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

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InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.

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Section: Proposed Solutions For the Improvement Of T2sl Detector Perfmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

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“…Thus there is a strong interest in growing superlattices (SLs) on GaAs substrates. So far, molecular beam epitaxy (MBE) has been used as the major growth technology for InAs/GaSb structures [3]- [5]. However, growth of the SLs by metalorganic chemical vapor deposition (MOCVD) is more challenging than that by MBE [6], [7] especially for the growth on GaAs substrates due to the 7.8% lattice mismatch between GaAs and GaSb It is ideal to grow the AlGaSb films on latticematched GaSb substrates.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

2017

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Abstract. Epitaxial Al Ga Sb x 1xlayers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520qC and 680qC and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540qC, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580qC and 600qC with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580oC with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology.

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“…Such type-II SLs have been used in new IR detectors as an alternative to conventional materials such as HgCdTe and the intersubband quantum-wells due to their unique capability for band structure engineering which results in great flexibility in controlling the detection wavelength (from 3 to 30 mm) [1], low Auger recombination rates [2,3] and small tunneling current [4]. So far, high-quality InAs/GaSb SL materials used for IR photodetectors have mostly been grown by molecular beam epitaxy (MBE) [5][6][7][8]. However, the growth of InAs/GaSb SLs with high crystalline quality and good optical properties by metalorganic chemical vapor deposition (MOCVD) remains a great challenge.…”

Section: Introductionmentioning

confidence: 99%