2011
DOI: 10.1016/j.actamat.2011.05.029
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Migration and annihilation of non-equilibrium point defects in sputter deposited nanocrystalline alpha-Fe films

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Cited by 22 publications
(9 citation statements)
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“…In these materials, however, the initial dislocation density appeared very low. Sputtering has also been shown to result in relatively high vacancy concentrations [38] but it is expected that this effect will provide only a minor contribution as it has been shown that a vacancy can trap only up to two carbon atoms in BCC iron [39].…”
Section: Discussionmentioning
confidence: 99%
“…In these materials, however, the initial dislocation density appeared very low. Sputtering has also been shown to result in relatively high vacancy concentrations [38] but it is expected that this effect will provide only a minor contribution as it has been shown that a vacancy can trap only up to two carbon atoms in BCC iron [39].…”
Section: Discussionmentioning
confidence: 99%
“…Literature work is mainly on the investigation of selfdiffusion in thin metallic, semiconducting and ceramic films in form of isotope multilayers [1,[22][23][24][25][26]. One of the main achievements of the present work was to implement an improvement of the classical multilayer technique [27,28], where self-diffusion in bulk materials was measured by NR for the first time and to transfer the method to the application to lithium.…”
Section: Introductionmentioning
confidence: 99%
“…The time-dependence of the self-diffusivities found by analysis of the experimental data can be explained with the fact that a defect annihilation process is taking place during isothermal annealing 29 , 55 . In general, during self-diffusion in solids a point defect-atom exchange takes place while D = f D c D D D , assuming a single dominating defect governing diffusion.…”
Section: Resultsmentioning
confidence: 88%