Migration-induced field-stabilized polar phase in strontium titanate single crystals at room temperature

Hanzig, Juliane; Zschornak, Matthias; Hanzig, Florian; Mehner, Erik; Stöcker, Hartmut; Abendroth, Barbara; Röder, Christian; Talkenberger, Andreas; Schreiber, Gerhard; Rafaja, David; Gemming, Sibylle; Meyer, Dirk C.

doi:10.1103/physrevb.88.024104

Cited by 56 publications

(96 citation statements)

References 49 publications

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“…This result indicates that the light illumination indeed helps the gate field in inducing a structural deformation. As revealed by the previous work 25 , the lattice expansion of STO is a signature of interface polarization 25 . The structural distortion could not be a thermal effect as it continues to remain once it has appeared even after the sample is shaded from light, and the illumination alone produces no effect on structure (see Supplementary Fig.…”

Section: Resultsmentioning

confidence: 64%

“…As well established, prior to resistance degradation, a broad current peak will appear when the V O s in the near region of the anode reach cathode 25,26 . As shown by the Supplementary Fig.…”

Section: Discussionmentioning

confidence: 85%

“…A recent study has shown that the electromigration of oxygen vacancies can lead to a polarity-asymmetric interface polarization 25 , which was built up in 420 h under a strong field. This slow buildup of the polar phase is reminiscent of the slow gating process observed when only the electrical field is applied (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…25, the polarization will disappear in several seconds after removing the external field. This is consistent with our observation that R S quickly drops back when the gate bias is removed (Fig.…”

Section: Discussionmentioning

confidence: 99%

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Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

Lei

Chen

et al. 2014

Nat Commun

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Electrostatic gating field and light illumination are two widely used stimuli for semiconductor devices. Via capacitive effect, a gate field modifies the carrier density of the devices, while illumination generates extra carriers by exciting trapped electrons. Here we report an unusual illumination-enhanced gating effect in a two-dimensional electron gas at the LaAlO 3 /SrTiO 3 interface, which has been the focus of emergent phenomena exploration. We find that light illumination decreases, rather than increases, the carrier density of the gas when the interface is negatively gated through the SrTiO 3 layer, and the density drop can be 20 times as large as that caused by the conventional capacitive effect. This effect is further found to stem from an illumination-accelerated interface polarization, an originally extremely slow process. This unusual effect provides a promising controlling of the correlated oxide electronics in which a much larger gating capacity is demanding due to their intrinsic larger carrier density.

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Section: Resultsmentioning

confidence: 64%

Section: Discussionmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

Lei

Chen

et al. 2014

Nat Commun

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“…Some other works also reported on the observation of this peculiar effect. [16][17][18] However, since STO is ordinarily quantum-paraelectric at ambient temperature, 19,20 the cause for the electric field-induced distortion wasn't clear yet. Hanzig et al suggested that the structural distortion is ascribed to field-driven redistribution of V O s, accompanied by formation of a polar phase in STO.…”

Section: Introductionmentioning

confidence: 99%

A novel structural expansion in SrTiO3 tuned by electric field and visible-light

Peng

Mao

et al. 2017

AIP Advances

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SrTiO3 is a model perovskite oxide of abundant physical properties, which are closely associated with internal oxygen vacancy (VO) defects. Through in situ X-ray diffraction measurements, we observed a remarkable structural expansion in the near-surface region of (001)-SrTiO3 induced by an external electric field. By repeated scanning and consistently monitoring the 002 reflections, forming process of the unique structural distortion was obtained and considered to be the results of electromigration and redistribution of VOs. Peculiarly, it was found that a much greater lattice distortion would occur rapidly in SrTiO3 under the illumination of visible light, and be effectively tuned depending on wavelength. We propose that the light effect stems from photo-excitation, which generates extra carriers and remarkably speeds up the diffusion of VOs. This work provides a feasible way towards tuning the kinetics of VOs and structure of SrTiO3 by combined stimuli of electric field and light illumination, yielding novel properties in above films as well as hetero-interface at SrTiO3-based oxide system.

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From Electric Doping Control to Thermal Defect Nucleation in Perovskites

Marinković

Fernández‐Rodríguez

Fourneau

et al. 2022

Adv Materials Inter

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Simultaneous optical microscopy and electric transport measurements on La0.7Sr0.3MnO3 nanobridges, grown on SrTiO3 (STO), show direct evidence of directional oxygen vacancy migration under large voltage bias. Comparative study on discontinuous structures, with voltages applied across a micron‐scale gap, demonstrates that high electric fields induce electrolytic modifications confined to the anode. Extensive electromigration is shown to induce the formation of linear surface scars on the STO substrate, following well defined crystallographic directions. The reproducible triggering of these surface dislocations is demonstrated, unveiling their thermal rather than electrical origin and it is shown that they do not represent electroformed conduction channels. High‐resolution scanning transmission electron microscopy imaging reveals that the scars correspond to nanometer scale steps caused by (101) gliding planes in the STO caused by the proliferation of edge dislocations and local lattice expansion. These findings shed light on selective electrically‐controlled atom migration and its role in structural modification of functional oxides, opening a unique avenue for ionotronic device design.

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Migration-induced field-stabilized polar phase in strontium titanate single crystals at room temperature

Cited by 56 publications

References 49 publications

Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

A novel structural expansion in SrTiO3 tuned by electric field and visible-light

From Electric Doping Control to Thermal Defect Nucleation in Perovskites

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