Migration polarization in dielectrics and semiconductors

Oreshkin, P. T.; Starchenkov, B. K.; Andreeva, L. P.

doi:10.1007/bf00823432

Cited by 3 publications

(2 citation statements)

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“…The measurements were carried out in atmospheric conditions in the temperature range of 77-510 K using the isothermal measurement mode. The temperature was maintained with an accuracy of 1 K. The low-signal admittance parameters that in general include differential capacitance, conductivity, dielectric losses, and resistances in the parallel and serial equivalent RC circuits [39][40][41][42] were determined for the frequencies in the range of 10 3 -10 7 Hz.…”

Section: Methodsmentioning

confidence: 99%

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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nanoelectronic devices with the effect of resistive switching, which consists in a reversible change of resistance in response to electrical stimulation [5] and is identified with the memristive effect. [6] Despite the significant progress in understanding of the memristive effect and approaching maturity of the technology of resistiveswitching devices over the last 10 years, there are still a number of fundamental problems to solve.A key problem on the way of using resistive-switching devices as programmable elements in memory devices and mixed analog-digital processors of new generation is the variability of resistive switching parameters inherent to memristive thin-film devices. [7] Achieving stable switching between the nonlinear resistive states is also an important task on the way to implementing large passive crossbar arrays of memristors and solving the problem of leakage currents in them. [8,9] Metal-oxide memristive devices are most compatible with the traditional complementary metal oxide semiconductor (CMOS) process and exhibit a valence change memory effect. [10] The variation of switching parameters in such devices is caused by the stochastic nature of migration of oxygen ions and/or vacancies responsible for the local oxidation and recovery of conductive channels (filaments) and is accompanied by the degradation of switching parameters in the case of uncontrolled oxygen exchange between the dielectric and electrode materials.The traditional approaches to control the reproducibility of resistive switching include the formation of special electric field concentrators [11][12][13] and appropriate selection of materials/interfaces in memristive device structure. In the latter case, bilayer or multilayer structures are formed, in which the switching oxide alternates with a barrier/buffer layer (layers) to control the migration of oxygen vacancies, [14,15] with a layer of low dielectric constant [16,17] to obtain nonlinear currentvoltage (I-V) characteristics, or with a layer of higher/lower thermal conductivity [18,19] for the removal/retention of heat in the switching area and to achieve analog switching character. To tune the resistive states with given accuracy, regardless of

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Section: Methodsmentioning

confidence: 99%

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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“…An increase in the voltage applied leads to a change in the equivalent circuit parameters in the frequency range f < 10 5 Hz. The increase in dielectric losses with a decreasing frequency is described by losses of the Ohmic nature [ 11 ], which are minimal after switching with a voltage of +7 V. In the same frequency range, R p decreases with increasing voltage. However, the essential shortcutting effect of the Ohmic leakage is also evident after switching with the voltage of +7 V. Thus, it is not possible to eliminate the effect of filaments on the electrical characteristics in the stack under study completely.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices

et al. 2023

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The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method. It is revealed that the as-fabricated devices do not require electroforming but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior. The conduction mechanisms in the device stack are associated with the effect of traps in the insulator, which form filaments in the places where the electric field is concentrated. The filaments shortcut the capacitance of the stack to different degrees in the high-resistance state (HRS) and in the low-resistance state (LRS). As a result, the electron transport possesses an activation nature with relatively low values of activation energy in an HRS. On the contrary, Ohm’s law and tunneling are observed in an LRS. CMOS-compatible materials and low-temperature fabrication techniques enable the easy integration of the studied resistive-switching devices with traditional analog–digital circuits to implement new-generation hardware neuromorphic systems.

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Transient processes in electric transport in the powder MoS2 samples

Vainberg

Pylypchuk

Poroshin

et al. 2022

Journal of Applied Physics

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The transient processes in the electric conduction of fine disperse 2D-MoS2 powder samples, occurring at changing voltages applied to the sample under the conditions of uniaxial compression, have been studied. The long-term transient changes in conduction occurring both after switching on and off the applied voltage were observed. The current–voltage characteristics have a hysteresis of branches corresponding to increasing and decreasing voltages. The observed results are explained within the frame of the migration (interlayer) polarization model.

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Migration polarization in dielectrics and semiconductors

Cited by 3 publications

References 0 publications

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices

Transient processes in electric transport in the powder MoS2 samples

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