Millimeter-Wave CW IMPATT Diodes and Oscillators

Midford, T.A.; Bernick, R.L.

doi:10.1109/tmtt.1979.1129653

Cited by 104 publications

(41 citation statements)

References 19 publications

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“…Among two-terminal solid-state sources impact avalanche transit time (IMPATT) devices have already emerged as high-power, high-efficiency solid-state sources for both microwave (3-30 GHz) and millimeter-wave (30-300 GHz) frequency bands (Midford and Bernick 1979;Chang et al 1977;Gray et al 1969). Si and GaAs IMPATTs are already established as powerful and efficient sources at different millimeter-wave window frequencies (Luy et al 1987;Dalle et al 1990;Luschas et al 2002a, b;Shih et al 1983;Eisele and Haddad 1995).…”

Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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“…7 at three bias current densities for a fixed voltage modulation (50 %). The reported large-signal results of DDR Si transit time devices at 94, 140 and 220 GHz window frequencies [12] and the corresponding experimental results [17][18][19] are shown in Fig. 7 for the sake of comparison of RF performance of DAR and DDR Si IMPATTs at those frequencies.…”

Section: Comparison Between Simulation and Experimental Results Of Ddmentioning

confidence: 99%

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

2014

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A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is developed for this study. The simulation results show the existence of several distinct negative conductance bands in the admittance characteristics separated by positive conductance. Thus the DAR device is capable of delivering RF power not only at the design frequency but also at several frequency bands higher than the design frequency band in the mm-wave regime. A comparative study with DDR Si device designed to deliver RF power at a particular mm-wave frequency band shows that DAR Si device is capable of delivering significantly higher RF power not only at the designed mm-wave frequency band, but also at higher frequency bands.

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“…These diodes are reverse biased to produce electron-hole pairs in the depleted region of a semiconductor and contain either a single-drift region (SDR), consisting of a single p-n layer, or a double-drift region (DDR) , consisting of a p+ -p -n -n + multilayer structure [48].…”

Section: Impatt Diode Thz Source and Imaging Cameramentioning

confidence: 99%

“…The DDR is superior to the SDR because the two drift zones enable higher drift zone voltages that allow for higher direct current (DC) to radio-frequency (RF) conversion efficiency and higher RF power output [47], [48]. The transit time is the time taken for the carriers to cross the depletion layer, and the thicknesses, materials and doping levels of the semiconductor layers are chosen based on the transit time required to obtain a particular frequency [48], [4 7].…”

Section: Impatt Diode Thz Source and Imaging Cameramentioning

confidence: 99%

“…The transit time is the time taken for the carriers to cross the depletion layer, and the thicknesses, materials and doping levels of the semiconductor layers are chosen based on the transit time required to obtain a particular frequency [48], [4 7]. Devices operating at approximately 100 GHz commonly use silicon (Si) as the semiconductor material [48].…”

Section: Impatt Diode Thz Source and Imaging Cameramentioning

confidence: 99%

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Single-frequency terahertz Michelson interferometer for applications in wood products

Lawyer¹

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There is an ever-growing demand in the wood products industry for cost-effective and compact equipment to ensure wood quality measures and specifications are met. Recently, terahertz (THz) technology has begun to pave the way for new , non-destructive imaging techniques rather than the standard use of X-ray or microwave technology.A prototype THz Michelson interferometer operating at 0.102 THz was developed to measure the indices of refraction and absorption coeffi cients of maple, hemlock and birch. These measurements were compared to the Picometrix system, which uses conventional THz time-domain spectroscopy and has been implemented in an industrial setting for the real-time measurement of the density of OSB flakes . However , the cost and complexity of the Picometrix system prohibits its use for many industrial applications. The interferometer is cost-effective, compact and provides accurate data at low THz frequencies , thus providing an excellent alternative direction for new THz technology in the wood products industry.

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Millimeter-Wave CW IMPATT Diodes and Oscillators

Cited by 104 publications

References 19 publications

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

Single-frequency terahertz Michelson interferometer for applications in wood products

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