Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

Bandyopadhyay, Atindra Mohan; Acharyya, Aritra; Banerjee, J. P.

doi:10.1007/s10825-014-0599-3

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…BP (5) [Sm -2 ] BP (6) [Sm -2 ] 300 3.76x10 7 5.92x10 7 ηL (%) (1) ηL (%) (2) ηL (%) (3) ηL (%) (4) Fig. 4 exhibits the received experimental RF output of different semiconductor based DDR IMPATTs, reported earlier [10][11][12][13][14][15][16][17] with the computed RF output power of the mm-wave DAR Si IMPATTs.…”

Section: Junction Temperature[k]mentioning

confidence: 99%

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Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

Mukhopadhyay¹,

Ghivela

2023

Preprint

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This study investigates the impact of junction temperature on the high-frequency performance of a DAR (Double Avalanche Region) IMPATT oscillator, operating at several frequency bands. By using a simulation technique created by the authors, the temperature dependency of static (DC) and high frequency properties are observed. The large-signal admittance features reveal the existence of distinct, widely spaced negative conductance bands, which can result in a broad tuning capability. The linear and non-linear changes of high frequency parameters have been examined as a function of temperature. These will be extremely helpful for the optimum thermal design of ATT (Avalanche transit time) devices.

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Section: Junction Temperature[k]mentioning

confidence: 99%

“…The DAR IMPATT diode was then subjected to tiny signal simulation by Pati et al [3]. The multiple bands functioning of DAR based on Si (Silicon) and InP (Indium Phosphide) was explored by Banerjee et al .They conducted high-frequency simulation of W-band DAR IMPATTs [4]. Recently S.J.…”

Section: Introductionmentioning

confidence: 99%

Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

Mukhopadhyay¹,

Ghivela

2023

Preprint

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“…The small signal quality factor is depends upon the conductance and susceptance of the diode as given by Equation

- Q = \frac{B}{- G}

…”

Section: Modeling and Computational Proceduresmentioning

confidence: 99%

Modeling and computation of double drift region transit time diode performance based on graphene‐SiC

Ghivela

Sengupta

2019

Int J Numerical Modelling

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We have proposed a double drift region (DDR) Impact Avalanche Transit Time (IMPATT) diode based on graphene-silicon carbide (SiC) substrate. Due to attractive and extensive electronics properties of graphene materials, for the first time, we have modeled and designed the diode on epitaxially grown graphene deposited on the silicon face of SiC. The direct current (DC) characteristics and small signal performance of the modeled diode are computed with the help of COMSOL Multi Physics and MATLAB software tools. Performance is evaluated at the frequency regime of Ka band. The proposed diode is validated through the boundary conditions. Profiles of electric field distribution, density of mobile space charge, conversion efficiency, power density, susceptance-conductance, and voltage drops at different zones are obtained. The graphene-SiC-based DDR IMPATT is giving better DC and small signal performances.

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“…The analytical expression developed in this paper will be very useful for the modelling and simulation of some important semiconductor devices that operate under avalanche breakdown conditions such as IMPATT diodes, avalanche photodiodes, etc. The said analytical expression will be specifically useful for the simulation of the above-mentioned devices via the drift-diffusion or quantum-corrected drift-diffusion models reported earlier by the author [11][12][13][14][15][16][17][18] . The details of the theoretical model developed in the present work have been discussed in the next section.…”

Section: Introductionmentioning

confidence: 99%

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Acharyya¹

2018

J. Semicond.

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The hot electron transport in wurtzite phase gallium nitride (Wz-GaN) has been studied in this paper. An analytical expression of electron drift velocity under the condition of impact ionization has been developed by considering all major scattering mechanisms such as deformation potential acoustic phonon scattering, piezoelectric acoustic phonon scattering, optical phonon scattering, electron-electron scattering and ionizing scattering. Numerical calculations show that electron drift velocity in Wz-GaN saturates at 1.44 × 105 m/s at room temperature for the electron concentration of 1022 m−3. The effects of temperature and doping concentration on the hot electron drift velocity in Wz-GaN have also been studied. Results show that the saturation electron drift velocity varies from 1.91 × 105–0.77 × 105 m/s for the change in temperature within the range of 10–1000 K, for the electron concentration of 1022 m−3; whereas the same varies from 1.44 × 105–0.91 × 105 m/s at 300 K for the variation in the electron concentration within the range of 1022–1025 m−3. The numerically calculated results have been compared with the Monte Carlo simulated results and experimental data reported earlier, and those are found to be in good agreement.

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Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

Cited by 7 publications

References 17 publications

Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

Modeling and computation of double drift region transit time diode performance based on graphene‐SiC

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

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