Million-atom tight-binding modeling of non-polar a-plane InGaN light emitters

A novel high-k dielectric material is proposed for InGaN/GaN-LED to improve the performance. The proposed LED is analyzed and benchmarked with conventional LED using Technological Computer Aided Design (TCAD). The qualitative consistency of the optical characteristics of LED in this work has been observed that validate the TCAD simulation. Further, it is observed that proposed LED recorded higher luminous power and internal quantum efficiency (IQE) than that of conventional LED. At the injection current of 600 mA, the proposed and conventional LED yielded luminous power of 1600 mW and 1400 mW, respectively. Further, IQE of the proposed LED is higher than that of conventional LED by 12%. The improvement in the optical performance is attribute to high-k dielectric material induced additional electric field and radiative recombination rate. Thus, the proposed LED with high-k dielectric material is an outstanding device in lightning application.

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Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

Saranya

Sivamangai

2021

Opt Quant Electron

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Nitride dot-in-nanowire light emitters with suppressed auger process

Zhang

Ahmed

2020

Optical Materials

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Optimized valence force field model for the lattice properties of non-ideal III-nitride wurtzite materials

Zinovchuk

Sevost’yanov

2019

Physica B: Condensed Matter

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Million-atom tight-binding modeling of non-polar a-plane InGaN light emitters

Cited by 5 publications

References 26 publications

Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

Nitride dot-in-nanowire light emitters with suppressed auger process

Optimized valence force field model for the lattice properties of non-ideal III-nitride wurtzite materials

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