Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Abstract

We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission.

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

“…AlGaN and InAlGaN alloys are very attractive for realizing high-efficiency DUVLEDs and LDs [1,2]. Several groups have reported AlGaN-, InAlGaN-, or AlN-based DUV LEDs, such as 333-350 nm AlGaN LEDs [3][4][5], 240-280 nm AlGaN multiquantum-wells (MQWs) LEDs [6][7][8], quaternary InAlGaN MQW LEDs [9,10] and a 210 nm AlN LED [11].…”

Extremely high efficiency 280 nm‐band emission from quaternary InAlGaN quantum wells realized by controlling Si‐doped layers

“…Several groups have reported AlGaN-or InAlGaNbased DUV LEDs, such as 333-350 nm AlGaN LEDs [3][4][5], 240-280 nm AlGaN multi-quantum-wells (MQWs) LEDs [6][7][8] and quaternary InAlGaN MQW LEDs [9][10]. The shortest wavelength AlN LED, at 210 nm, was reported [11].…”

222 nm single‐peaked deep‐UV LED with thin AlGaN quantum well layers

“…In the U.S., the effort to DUV light source has been coordinated by DARPA's Semiconductor Ultraviolet Optical Sources (SUVOS) program. Innovations developed by Asif Khan and co-workers at the University of South Carolina (USC) have led to recent advantage in DUV LEDs [6][7][8].…”