MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient

Wu, Yung-Hsien; Ou, Wei-Yuan; Lin, Chia-Chun; Wu, Jia-Rong; Wu, Min-Lin; Chen, Lun-Lun

doi:10.1109/led.2011.2173791

Cited by 29 publications

(12 citation statements)

References 20 publications

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“…The junction line was designed to be at the center of the waveguide, with no intentionally added intrinsic region width. This low-doped PN junction is in favor of the efficiency versus loss tradeoff, characterized by the figure-of-merit F dB-V (in dB*V) as defined in [22,23]. Also, it helped achieve a low by maintaining a low and competitive .…”

Section: Pn Junction Designmentioning

confidence: 99%

“…The curve versus is basically versus . This approach was widely used in publications on silicon modulators, including several in the references list, for example [11], [13,14], [23] and [24]. At -1V bias the measured phase shifter V π L π was 2.7V-cm.…”

Section: V π L π and Insertion Lossmentioning

confidence: 99%

“…It is not uncommon for there to be several layers of metal available in wafer-scale processes [7], as shown in Fig 2., and for silicon-on-insulator (SOI) with a high-resistivity handle wafer to be used [22], allowing high Q inductors. Metal-insulator-metal (MIM) capacitors will also likely be available as CMOS-compatible processes are adapted to address silicon photonics [22,23]. Crucially, as part of a monolithically integrated back-end, these components can be built directly adjacent to integrated waveguide-coupled photodetectors.…”

Section: Introductionmentioning

confidence: 99%

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PECASE: New Directions for Silicon Integrated Optics

Hochberg¹

2013

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188) Washington, DC 20503. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD--MM--YYYY) 30-04-2013 REPORT TYPE PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)University of Washington Office of Sponsored Programs 4333 Brooklyn Avenue NE Seattle, WA 98195-0001 PERFORMING ORGANIZATION REPORT NUMBER SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)AF Office of Scientific Research 875 N. Randolph Street, Room 3112 Arlington, VA 22203 SPONSOR/MONITOR'S ACRONYM(S) AFOSR SPONSORING/MONITORING AGENCY REPORT NUMBER DISTRIBUTION AVAILABILITY STATEMENTDistribution A SUPPLEMENTARY NOTES ABSTRACTThis progress report summarizes achievements in Professor Hochberg's research group at the University of Delaware in the development of three new application areas for silicon photonics. This work has been supported by the AFOSR PECASE award since February 2010.The research goals including demonstrating radically new classes of nonlinear optical devices in the silicon system, demonstrating mid-infrared integrated optics in silicon and pursuing new investigations into using silicon resonators as high sensitivity biosensors will be discussed. The results of the research including scientific publications and patents are included in this report. AFOSR support has been acknowledged in all these publications and presentations. Newark, DE 19716-1551 e-mail: Hochberg@udel.edu Tel: (302) 831-2405 Fax: (302) 831-4375 Report Title PECASE NEW DIRECTIONS FOR SILICON INTEGRATED OPTICS AbstractThis progress report summarizes achievements in Professor Hochberg's research group at the University of Delaware in the development of three new application areas for silicon photonics. This work has been supported by the AFOSR PECASE award since February 2010. The group has now made a successful transition to U. Delaware, so this report summarizes the accomplishments at UW, and to date at UD.The research goals began as a program centered on demonstrating radically new classes of nonlinear optical devices in the silicon system, demonstrating mid-infrared integrated optics in silicon and pursuing new investigations into using silicon resonators as high sensitivity biosensors. A considerable effort went into each of these areas, and in each case we were able to demonstrate results that advanced the state of the art for each device category, as described in the publications.More rec...

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Section: Pn Junction Designmentioning

confidence: 99%

Section: V π L π and Insertion Lossmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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PECASE: New Directions for Silicon Integrated Optics

Hochberg¹

2013

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“…So far, no single dielectric material has been able to meet all of the above requirements. The solution most commonly used for reducing both the leakage current and the α coefficient is the stacking of a high-k dielectric of positive α with a dielectric of negative α, such as SiO 2 [2]- [4] or, more recently, ZrTiO x [5]. One of the main problems with this approach is that, in general, the positive value of α for the high-k material is very large and increases as a quadratic function of the capacitance density [5], [6].…”

Section: Introductionmentioning

confidence: 99%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

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We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

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“…Recently, a desirable VCC-α without sacrificing the capacitance density has been achieved by employing the so-called "canceling effect" which stacks two dielectrics with respective positive and negative VCC-α values [4]. To Manuscript [7], attempting to exhibit good electrical characteristics for MIM capacitors. However, due to the relatively low κ value of SiO 2 , MIM capacitors using SiO 2 /high-κ stack as the insulator rarely achieve capacitance density higher than 12 fF/μm 2 with acceptable characteristic of VCC-α.…”

Section: Introductionmentioning

confidence: 99%

$\hbox{ZrLaO}_{x}\hbox{/ZrTiO}_{x}\hbox{/ZrLaO}_{x}$ Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect

Chen

Lin

et al. 2012

IEEE Electron Device Lett.

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Metal-insulator-metal (MIM) capacitors with ZrLaO x /ZrTiO x /ZrLaO x laminate as the insulator were explored in this work. Single ZrTiO x dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high κ value of 22.5. By integrating this dielectric with ZrLaO x which provides a positive VCC-α and a high κ value of 25.8, the "canceling effect" of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminated structure display desirable characteristics in terms of a capacitance density of 14.6 fF/μm 2 , a low VCC-α of 33 ppm/V 2 , negligible frequency dispersion, and satisfactory leakage current of 1.6 × 10 −6 A/cm 2 at −1.5 V. These results also well meet the International Technology Roadmap for Semiconductors requirement set for 2020.Index Terms-Canceling effect, metal-insulator-metal (MIM) capacitors, negative quadratic voltage coefficient of capacitance (VCC-α), ZrLaO x /ZrTiO x /ZrLaO x laminate.

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MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient

Cited by 29 publications

References 20 publications

PECASE: New Directions for Silicon Integrated Optics

PECASE: New Directions for Silicon Integrated Optics

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

$\hbox{ZrLaO}_{x}\hbox{/ZrTiO}_{x}\hbox{/ZrLaO}_{x}$ Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect

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