Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

Abstract

Memristors, owing to their uncomplicated structure and resemblance to biological synapses, are predicted to see increased usage in the domain of artificial intelligence. Additionally, to augment the capacity for multilayer data storage in high-density memory applications, meticulous regulation of quantized conduction with an extremely low transition energy is required. In this work, an a-HfSiOx-based memristor was grown through atomic layer deposition (ALD) and investigated for its electrical and biological properties for use in multilevel switching memory and neuromorphic computing systems. The crystal structure and chemical distribution of the HfSiOx/TaN layers were analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The Pt/a-HfSiOx/TaN memristor was confirmed by transmission electron microscopy (TEM) and showed analog bipolar switching behavior with high endurance stability (1000 cycles), long data retention performance (104 s), and uniform voltage distribution. Its multilevel capability was demonstrated by restricting current compliance (CC) and stopping the reset voltage. The memristor exhibited synaptic properties, such as short-term plasticity, excitatory postsynaptic current (EPSC), spiking-rate-dependent plasticity (SRDP), post-tetanic potentiation (PTP), and paired-pulse facilitation (PPF). Furthermore, it demonstrated 94.6% pattern accuracy in neural network simulations. Thus, a-HfSiOx-based memristors have great potential for use in multilevel memory and neuromorphic computing systems. Graphical Abstract

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

“…PPF is a prominent characteristic of short-term plasticity (STP) exhibited by biological synapses, , which is specifically characterized by the application of two stimuli of equal intensity. In this scenario, the postexcitation current generated by the second stimulus surpasses that induced by the initial stimulus.…”

Investigating the Role of Interfacial Layer for Resistive Switching in a Hybrid Dion-Jacobson Perovskite-Based Memristor

“…As shown in Figure d, the number of presynaptic pulses increased from 1 to 25 and the conductivity of the device also increased. To investigate the response of conductivity by applying different widths of the pulses, the response was measured as shown in Figure e as the width of the pulse is increased from 10 to 200 ms and the conductivity is also increased from 27 to 54 μA . IPSCs are the electrical currents that flow into the postsynaptic neuron when a neurotransmitter released from the presynaptic neuron binds to an inhibitory receptor on the postsynaptic membrane. , Therefore, an IPSC in a memristor would refer to a decrease in the current flowing through the memristor in response to a particular input (pulse width of 100 ms and pulse amplitude of 1 V; Figure e), which mimics the effect of an inhibitory neurotransmitter on a postsynaptic neuron.…”

SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

“…Reset voltage modulation and compliance current limitation can be employed consecutively on the electrode to achieve resistance modulation, akin to biological synapse weight enhancement and inhibition serving as a means to stimulate synaptic plasticity. The reset stop voltage is progressively increased from −1.0 V to −1.2 V, leading to the acquisition of three distinct stable resistance states, as depicted in Figure 3 a. Evidently, the ON/OFF ratios of memory devices are augmented with increasing reset stop voltage [ 39 ]. To further elucidate the analog switching characteristics, minor increments in the reset voltage are showcased under compliance currents of 5 mA and 10 mA, illustrated in Figure 3 b,c, respectively.…”