2023
DOI: 10.3390/nano13182603
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SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

Muhammad Ismail,
Chandreswar Mahata,
Myounggon Kang
et al.

Abstract: In this study, we fabricate a Pt/TiN/SnOx/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO2, acts as an oxygen vacancy reservoir, aiding the creation of conductive filaments in the switching layer. Our SnOx-based device exhibits remarkable endurance, with over 200 DC cycles, ON/FFO ratio (>20), and 104 s retention. Set and reset voltage variabilities are impressively low, at 9.89% and 3.2%, r… Show more

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