Over the last few years, the directed self-assembly of block copolymers by surface patterns has transitioned from academic curiosity to viable contender for commercial fabrication of nextgeneration nanocircuits by lithography. Recently, it has become apparent that kinetics, and not only thermodynamics, plays a key role for the ability of a polymeric material to self-assemble into a perfect, defect-free ordered state. Perfection, in this context, implies not more than one defect, with characteristic dimensions on the order of 5 nm, over a sample area as large as 100 cm 2 . In this work, we identify the key pathways and the corresponding free energy barriers for eliminating defects, and we demonstrate that an extraordinarily large thermodynamic driving force is not necessarily sufficient for their removal. By adopting a concerted computational and experimental approach, we explain the molecular origins of these barriers and how they depend on material characteristics, and we propose strategies designed to overcome them. The validity of our conclusions for industrially relevant patterning processes is established by relying on instruments and assembly lines that are only available at state-of-the-art fabrication facilities, and, through this confluence of fundamental and applied research, we are able to discern the evolution of morphology at the smallest relevant length scales-a handful of nanometers-and present a view of defect annihilation in directed self-assembly at an unprecedented level of detail.directed self-assembly | copolymer | defect | minimum free energy path | string method O ver the last decade, the directed self-assembly (DSA) of block copolymers has rapidly evolved from mere intellectual curiosity (1-4) to a potentially crucial step in the commercial fabrication of next-generation electronic circuits. Indeed, the characteristic length scale of ordered self-assembled copolymer domains is in the range of 5-50 nm. Furthermore, their size and shape can be manipulated through simple processing steps, thereby making them attractive for the production of semiconductor devices, nanofluidic devices, or high-density storage media (5, 6). The general idea behind copolymer DSA is that a surface patternchemical or topographic-can be used to guide the assembly of a polymeric material into an ordered, device-like structure that is free of defects. In so-called "density multiplication" patterning strategies (7,8), the spacing or pitch of the surface features can be much larger than the characteristic dimensions of the copolymer of interest. One can thus prepare coarse surface patterns, which are easier to create, and rely on the copolymer to self-assemble into features whose density is considerably larger. Fig. 1 shows a schematic representation of the process for obtaining a lamellar morphology on a stripe-patterned substrate under a one-to-three (or 3X) density multiplication strategy. Patterned stripes interact preferentially with one of the blocks and guide the assembly of thin copolymer films into ordered lam...