Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

Park, Dae-Gyu; Reed, J.; Morkoç̌, H.

doi:10.1063/1.119853

Cited by 15 publications

(5 citation statements)

References 18 publications

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“…Hence, indirect plasma methods become necessary. Among them, the best results have been obtained by the remote plasma enhanced CVD process (r-PECVD), developed by the North Caroline State University group, [4,5] and by the electron-cyclotron resonance (ECR) method [6][7][8][9][10]. An advantage of the ECR method against the r-PECVD process is that ECR presents higher ionizing efficiency.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Martínez

Prado

Mártil

et al. 2001

Semicond. Sci. Technol.

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A comparative investigation of the characteristics of the SiN x :H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the interface trap density within the silicon bandgap. The samples were grown by the electron-cyclotron resonance plasma method starting from SiH 4 and N 2 as precursor gases whose flow ratio was varied to produce films of three different compositions: silicon rich, near stoichiometric and nitrogen rich. Post-deposition rapid thermal annealing treatments were applied to observe the evolution of interface properties with the annealing temperature in the range from 300 to 1050 • C. For thin dielectrics, the interface state density has a U-shaped distribution dominated by band-tail states. The minimum of this distribution decreases significantly and shifts to midgap for moderate annealing temperatures. For higher annealing temperatures, the trend is reversed. In the silicon-rich films, the percolation of rigidity caused by the chains of Si-Si bonds impedes the initial decrease of the defect density. For thicker films, the strain of the SiN x :H film produces a higher density of defects that results in increased levels of leakage currents and poorer electrical characteristics.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Martínez

Prado

Mártil

et al. 2001

Semicond. Sci. Technol.

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“…These efforts are summarized in a review paper. 14 On the other hand, attempts to control GaAs and InGaAs surfaces by Si ICL and Si/ Ge ICL have also been made by other groups such as Morkoç and co-workers [15][16][17] and, more recently, Lee and co-workers 18,19 in order to realize high performance GaAs MOS transistors.…”

Section: Introductionmentioning

confidence: 99%

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Akazawa

Hasegawa

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In order to realize pinning-free high-k dielectric metal-insulator-semiconductor ͑MIS͒ gate stack on ͑001͒ and ͑111͒B oriented GaAs surfaces using the Si interface control layer ͑Si ICL͒ concept, formation of a SiN x / Si ICL double layer was investigated as a chemically stable structure on ͑001͒ and ͑111͒B surfaces which allows ex situ deposition of HfO 2 high-k dielectric films without losing the benefit of Si ICL. First, Si ICLs grown by molecular beam epitaxy ͑MBE͒ on ͑001͒ and ͑111͒B GaAs surfaces with various initial surface reconstructions were investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy ͑XPS͒ investigations at each step of the interface formation. Large shifts of the surface Fermi level position toward unpinning were observed after Si ICL growth on appropriately formed Ga-stabilized surfaces. It was found that Si layers grow epitaxially with Si-Ga bonds at the Si/ GaAs interface and Si-As termination on top, suggesting surfactant roles played by As atoms. Then, an ultrathin SiN x buffer film was formed on the Si ICL by its in situ partial nitridation in the MBE chamber. An XPS analysis of the resultant SiN x / Si ICL double layer formed on ͑001͒ and ͑111͒B surface indicated that the structure is chemically stable against air exposure on both surfaces in the sense that it prevents the host GaAs surface from subcutaneous oxidation, although SiN x film itself partially turns into SiO x N y . Finally, high-k MIS capacitors were formed by ex situ deposition of HfO 2 on the SiN x / Si ICL/GaAs structure after transferring the sample through air. The capacitance-voltage ͑C-V͒ analysis indicated that the MIS interface is completely pinning-free with a minimum interface state density in the range of low 10 11 cm −2 eV −1 .

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“…Therefore, the dominant mechanism for controlling minority-carrier response must be generation and recombination through bulk traps in the measured MOS structures over the temperature range of 300-500 K. The E a is also determined to be 0.71 eV in Al 2 O 3 / GaAs MOS structure, which is about half of the band gap energy of GaAs. Considering similar results from MOCVD grown InGaAs and GaAs presented here, from molecular beam epitaxy grown GaAs, 16 and from n-type, p-type, and gold doped p-type Si, 17 the conclusion that the E a is that of intrinsic concentration n i or half the band gap energy is quite general.…”

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confidence: 50%

“…16 The C-V measurements at 1 kHz-1 MHz and at elevated temperature from 300 to 500 K are systematically studied. Figure 2 shows the results measured at 100 kHz as a function of bias with temperature as a parameter.…”

mentioning

confidence: 99%

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Xuan

Lin

et al. 2006

Applied Physics Letters

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Articles you may be interested inLg=100nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Appl. Phys. Lett. Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties J. Appl. Phys. 112, 084103 (2012); 10.1063/1.4759329 Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices J. Appl. Phys. 109, 064101 (2011); 10.1063/1.3553872 InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layerdeposited gate dielectric Appl. Phys. Lett. 98, 082106 (2011); 10.1063/1.3559609Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al 2 O 3 gate dielectric

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Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

Cited by 15 publications

References 18 publications

Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

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Minority-carrier characteristics of SiNx/GaAs metal–insulator–semiconductor structures with Si/Ge interlayers

Cited by 15 publications

References 18 publications

Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

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Product

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Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Electrical properties of rapid thermally annealed SiN_x:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy