Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

Kurtz, S. R.; Klem, John F.; Allerman, Andrew A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

doi:10.1063/1.1453480

Cited by 93 publications

(48 citation statements)

References 14 publications

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“…9,10 For comparison, we first examined the dynamics of the GaN x As 1−x sample by the conventional optical pump-probe method. The system setup was similar to that shown in Fig.…”

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confidence: 99%

Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy

Takeuchi

Aoyama

Oshima

et al. 2004

Applied Physics Letters

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Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaN x As 1−x ͑x = 0.36% ͒ sample exhibited two ultrafast transient processes in the time-resolved tunnel current signal, whose lifetimes were determined to be 0.653± 0.025 and 55. Smaller and faster are the key words in the progress of current nanoscience and technology. Thus, for further advances, a method of exploring the ultrafast transient dynamics of the local quantum functions in organized small structures is eagerly desired. Ultrashort optical pulse technology in the near-infrared to ultraviolet region has allowed us to observe transient phenomena in the femtosecond range, the optical-monocycle region, 1,2 which, however, has a drawback of a relatively low spatial resolution due to electromagnetic wavelength. On the other hand, scanning tunneling microscopy (STM), although its time resolution is limited by circuit bandwidth ͑ϳ100 kHz͒, enables us to observe spatial dynamics at the atomic level in real space. 3 Therefore, the integration of ultrashort optical technology with STM has been one of the most exciting goals since their invention. [4][5][6][7] Pioneering works were performed by Hamers et al., 4-7 which have attracted the extensive interest of researchers in various fields. However, there remain critical problems which have prevented the achievement of the laser-combined STM measurement, such as the displacement current due to the stray capacitance of the tunneling gap and photoelectrons produced by multiple photoabsorption. [4][5][6][7] In such cases, since a large area is included in the processes, the superior space resolution of STM cannot be utilized. In particular, the thermal expansion of the STM tip by photoillumination causes much large noise in the tunneling current, making the measurement difficult.Here, we show the results of the time-resolved tunneling current measurement in the subpicosecond range, which can advance the development of future research in terms of ultimate temporal and spatial resolutions.A schematic of the measurement system is shown in Fig. 1. We adopted the recently developed shaken-pulse-pairexcited STM (SPPX-STM) method, which realizes highly sensitive measurement free from the thermal expansion effect of the tip and sample. 8 The tunneling junction is directly illuminated by a sequence of laser pulse pairs and average tunneling current, I t ͑t d ͒, is measured as a function of the delay time between the two pulses, t d . To decrease broadband noise, the delay time of the two pulses t d is modulated with a small amplitude ⌬t d at frequency , and the tunneling current is detected by a lock-in amplifier. Since the tunneling current I t responds to the modulation as In the pulse-pair-excited STM measurement, the first laser pulse in each pulse pair acts as the pump pulse to excite and modulate the electronic structure of the sample surface, which might cause d...

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“…9,10 For comparison, we first examined the dynamics of the GaN x As 1−x sample by the conventional optical pump-probe method. The system setup was similar to that shown in Fig.…”

mentioning

confidence: 99%

Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy

Takeuchi

Aoyama

Oshima

et al. 2004

Applied Physics Letters

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“…The epitaxial growth of the GaAs 1-x N x alloys is very difficult because of the large miscibility gap between GaAs and GaN. Additionally, the incorporation of more than 3% of nitrogen into GaAs 1-x N x alloy worsens its optical quality [3]. So, the main efforts of the investigators are focused on optimisation the epitaxial growth of A III B V -N alloys to improve their structural and optical quality.…”

Section: Introductionmentioning

confidence: 99%

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

Ściana

Zborowska-Lindert

Pucicki

et al. 2008

Opto-Electronics Review

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The nitrogen-containing conventional AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNx/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated

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“…Raman scattering [14] and infrared transmission [15][16][17] studies have shown that the annealing leads to the formation of N-In bonds instead of N-Ga ones. The change in the nitrogen bonds, thereby in the nitrogen nearest-neighbor environment, strongly influences the band gap of GaInNAs [11].…”

Section: Introductionmentioning

confidence: 99%

“…However, physics of GaInNAs is still not fully understood and has been under intensive study since the last few years (see Refs. [7][8][9][10][11][12][13][14][15][16][17][18] and references therein). Different approaches such as the band anticrossing model, empirical pseudopotential supercell method, first principles pseudopotential method, and tight-binding method were proposed in order to explain the GaInNAs band structure and its optical properties [7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Metastability of Band-Gap Energy in GaInNAs Compound Investigated by Photoreflectance

et al. 2004

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The band-gap energy of GaInNAs layers lattice-matched to GaAs substrate and annealed under different temperatures is investigated by photoreflectance spectroscopy. Different nitrogen nearest-neighbor environments of N atom appear in GaInNAs layers due to the post-growth annealing. It leads to an energy-fine structure of the band gap, i.e. well separated photoreflectance resonances related to different nitrogen nearest-neighbor environments (N-Ga4−mInm (0 ≤ m ≤ 4) short-range-order clusters). The temperature dependence of the band gap E(T ) related to different N-Ga 4−m In m clusters is investigated in 10-280 K temperature range, and Varshni and Bose-Einstein parameters for E(T ) are determined.

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Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

Cited by 93 publications

References 14 publications

Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy

Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

Metastability of Band-Gap Energy in GaInNAs Compound Investigated by Photoreflectance

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