Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Susi, E.; Lulli, G.; Passari, L.

doi:10.1149/1.2100649

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…Before any treatment wafers were tested for lifetime, resistivity, oxygen content, and crystal perfection homogeneity. As usual (11,13) appreciable nonhomogeneity in lifetime has been observed, with a maximum difference of 50% between the center and the periphery of the wafer. To avoid experimental uncertainties due to this nonhomogeneity, samples to be compared were taken from nearby zones of the same wafer, so that lifetime variations of more than 20% have been considered as significant.…”

Section: Experimentelmentioning

confidence: 54%

“…In Czochralski (CZ) crystals of corresponding dopant content after a similar thermal treatment, the recombination center concentration is controlled by two coexisting mechanisms, one resulting in a lifetime decrease and the other in a lifetime enhancement (12,13). The most conspicuous feature of the furnace-induced changes was the correlation between the lifetime and the crystal order variations and their strong dependence on boron content and oxygen content, temperature, and time.…”

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confidence: 99%

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Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Poggi¹,

Susi²

1991

J. Electrochem. Soc.

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Rapid thermal annealing (RTA) techniques, widely employed in device technology, can be used to study defect formation and annealing mechanisms. Interesting results have been obtained by us comparing the effects of electron beam and lamp rapid treatments on the equilibria between residual impurities, point defects, and their aggregates during low-temperature annealing of monocrystalline silicon. The lamp treatment results are comparable to short-time furnace ones, while the presence of defects induced by the RTA treatment in itself has been detected after the use of electron beam.The rapid thermal annealing techniques allow an improvement of the productivity/cost ratio and defect control in device processing, owing to the shorter processing times and lower contamination with respect to furnace annealings, and to the possibility of selecting the desired process from the undesired one, exploiting the differences in the reaction rates. This last possibility makes the use of RTA a useful tool for the studies of defect formation and annealing mechanisms in a large number of research fields, like metastability, gettering, diffusion, oxidation, and so on.To this purpose the isothermal (i.e., with heating times longer than 1 s) processes are employed. These have been performed by arc and halogen lamps, plasma, electron beams, but in recent years large-area incoherent lamps have come to be the most reliable heat source for the current technological applications, while electron beams are candidates for further developments toward the very rapid thermal annealing (VRTA) techniques (1).A considerable amount of experimental work has been done in defining the best technological conditions for the use of RTA; the connected physical mechanisms, like dopant diffusion, ion implant defect annealing, and so on, have been investigated, too (2). Less effort has been devoted to the applications of RTA as a tool for defect equilibria studies. Some work has been devoted to annealing and regrowth of thermal donors in silicon (3), and to gettering phenomena (4). Very few data exist of the interactions with the sample and the physical processes intrinsically connected to the use of these heat sources.We have employed RTA annealings to study the interactions between oxygen, carbon, and other residual impurities, point defects, and their aggregates that have been shown to be responsible for the characteristic changes in silicon electrical properties occurring during a thermal process (5-10).In our previous work on the effects of conventional furnace thermal treatments on minority carrier lifetime and crystal disorder in lightly and moderately doped p-type FZ silicon the existence of several phenomena in different temperature ranges has been displayed. The most interesting phenomena were observed in the 350-450~ range, with a reduction in lifetime connected to a decrease of lattice order (11).In Czochralski (CZ) crystals of corresponding dopant content after a similar thermal treatment, the recombination center concentration is controlled by tw...

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Section: Experimentelmentioning

confidence: 54%

mentioning

confidence: 99%

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Poggi¹,

Susi²

1991

J. Electrochem. Soc.

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“…These defects have been extensively studied for many years, without attaining a clear picture of their structure. Their effect on recombination of minority carriers is likely to be weak [4].…”

Section: Intrinsic Defects Si Self Interstitial and Vacancies And Tmentioning

confidence: 99%

Recombination mechanisms in crystalline silicon: bulk and surface contributions

Susi¹

1999

International Journal of Photoenergy

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In the present paper the most interesting results of a work on the influence of some processes used in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate are reported. In these studies the minority carrier lifetime and the surface recombination velocity were used as sensors of the Si electrical activity changes. Other electrical (DLTS, C-V and I-V characteristics, EBIC) and structural (X-ray double crystal diffractometry, IR spectroscopy) techniques were used to gather information about the nature and concentration of the defects induced by processing

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“…may lead to a dramatic and irreversible degradation of the bulk carrier lifetime [7] should be reduced. The carrier lifetime of our starting material was 4.9 ms as given by the manufacturer Topsil .…”

Section: Fabrication Processmentioning

confidence: 99%

Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors

Aite

Hari

Bijker

et al. 1991

Nuclear Instruments and Methods in Physics Research Section A:

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The fabrication process of a two-dimensional position sensitive radiation detector (2-D PSD) with a 4 cm 2 active area is presented. Critical steps in the fabrication are emphasised . Edge effects represent critical problems in producing large area ion implanted silicon radiation detectors with low leakage currents and a high breakdown voltage (BV) . Two methods have been used to increase the breakdown voltage of the junction : the use of i) floating held limiting rings (FFLR) and ii) field plates (FP) . Several situations have been simulated analytically and numerically. A comparison of the theoretical results with the measurements realised using the detectors is presented. It is shown that a substantial improvement in the BV of the detector can be achieved by these methods.

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Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Cited by 9 publications

References 8 publications

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Recombination mechanisms in crystalline silicon: bulk and surface contributions

Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors

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