Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case of n-type silicon, and the differences due to the various doping agents are discussed. Differences between concentrations determined by analytical techniques and by Hall effect measurements are reported.

Carrier recombination in silicon is analyzed as a function of doping density. Two mechanisms are identified: one for the low concentration range and one, of the Auger type, for the high concentration range. Disagreements with the theoretical predictions for the Auger process are discussed and empirical laws connecting lifetime to dopant concentration are determined.

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