Recombination mechanisms and doping density in silicon

Passari, L.; Susi, E.

doi:10.1063/1.332568

Cited by 73 publications

(22 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fit yields a barrier height of 0.912 V and a carrier lifetime of 5.3X 10"^ s. The latter value is in good agreement with the published lifetime of (4.85 ± 2.6) x 10 "^^ s for highquality p-type layers in the doping range of lO'"* to lO'^ cm~^ (Ref. [17]). …”

supporting

confidence: 78%

Ideal Schottky diodes on passivated silicon

Wittmer

Freeouf

1992

Phys. Rev. Lett.

View full text Add to dashboard Cite

Because of the complicated electronic and metallurgical properties of the metal-semiconductor interface, there is much controversy about the theoretical interpretation of experimental results on Schottky barrier heights. We present a new approach of barrier height measurements on a prototypical clean, abrupt and noninteracting system consisting of mercury contacts to hydrogen-passivated silicon surfaces. The resulting barrier to p-silicon is 0.9 V, totally at variance with all results presented for silicon Schottky barriers fabricated by standard metal deposition techniques. We believe this to be the first report in the limit of noninteracting metal contacts to silicon. PACS numbers: 73.20.-r, 73.30.+y, 73.40.-cThe study of the band lineup between a metal and a semiconductor in intimate contact (Schottky barrier) has led to much controversy concerning the theoretical interpretation of experimental results. Current theoretical models of the band lineup can be divided into two groups. One group of theories proposes that the experimental results are intrinsic to the perfect interface [1]. According to this model the band lineup is determined by the neutrality level at which the Fermi level will normally pin. This opinion currently dominates the physics literature, despite questions as to the universality of the model. The other group of theories postulates an extrinsic effect, typically involving a metallurgical interaction between the metal and the semiconductor, but differing in such details as to the physical origin of this extrinsic effect [2,3]. For example, the two dominant extrinsic models for Schottky barriers both on silicon and on compound semiconductors speculate that the interaction results either in detect formation in the semiconductor material or in an interfacial layer made up of a metallic alloy or mixture of phases. The former model leads to deep levels in the semiconductor, hence changing the band-bending charge distribution within the semiconductor [2], whereas the latter leads to a change in the boundary conditions between the metal and the semiconductor in a simple model of the interface [3].Any experimental attempt to distinguish between intrinsic and extrinsic models of the band lineup must in some fashion modify or eliminate the assumed extrinsic mechanisms. Such mechanisms usually invoke thermally driven or adsorption driven processes. Studies of interface formation at low temperatures have led to the observation of some differences in band alignments [4], but many of these differences are minor and obscured by experimental artifacts such as the photovoltage effects [5] in the photoemission techniques typically used in these studies. Clearly, a different method of investigation is needed on ideal, noninteractive metal-semiconductor interfaces to investigate the band lineup in Schottky barriers.We report here a room-temperature approach which circumvents the possibility of heat of nucleation or adsorption to drive an interaction between the metal and the semiconductor. We achieve this by exp...

show abstract

supporting

confidence: 78%

Ideal Schottky diodes on passivated silicon

Wittmer

Freeouf

1992

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…Measurements of Si in a reference sample containing no Ge dots with timeresolved free-carrier absorption give Si ϭ15 s, in agreement with data reported in the literature. 13 Assuming P ϭ100 mW/cm 2 , hϭ1.85 eV, and Si ϭ15 s, we find n ϭ5.1ϫ10 12 cm Ϫ2 . For a 3ϫ10 11 cm Ϫ2 SAQD density in each Ge layer, it yields a dot occupation number of about 2 and corresponds to approximately complete filling of the dot ground state ͑two holes per dot͒.…”

mentioning

confidence: 83%

Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots

et al. 2000

View full text Add to dashboard Cite

We have investigated experimentally the midinfrared normal-incidence response of holes confined in an array of Ge/Si self-assembled quantum dots. The dots have a lateral size of about 15 nm and a density 3 ϫ10 11 cm Ϫ2 . An in-plane polarized absorption in the 70-90 meV energy range is observed and attributed to the transition between the first two states in the dots. As the hole concentration in the dot ground state is increased, the absorption peak shifts to higher energies, its linewidth is reduced, and the line shape is changed from asymmetric to symmetric. We attribute all features to a depolarization-type effect similar to the case of two-dimensional systems. We believe that our results provide experimental evidence for the dynamic screening of an external field by in-plane polarized interlevel collective excitations.

show abstract

“…7 For the carrier densities calculated for 514 nm excitation, this results in Auger recombination lifetimes of 25.2 s and 198 ns for modulation frequencies of 10 Hz and 100 kHz, respectively. Thus, while Auger recombination will be irrelevant at low modulation frequencies, the increase in excess carrier density as the modulation frequency increases results in Auger recombination becoming the dominant process at high frequencies.…”

Section: Multiparameter Fitting Algorithm and Theoretical Fitsmentioning

confidence: 98%

“…For any carrier densities in excess of ϳ10 19 cm Ϫ3 , the short Auger lifetime results in a decrease of carrier densities that is essentially instantaneous on the time scale of the frequencies used in the current experiments and SRH recombination via lattice defects and impurities, and thus limits the carrier density to approximately 10 19 cm Ϫ3 . 7,8 It should be noted, however, that inclusion of carrier diffusion away from the surface was found to maintain the apparent injection density below ϳ10 19 cm Ϫ3 ͑see Table II͒.…”

Section: Multiparameter Fitting Algorithm and Theoretical Fitsmentioning

confidence: 99%

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Shaughnessy

Mandelis

2003

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inH + ion-implantation energy dependence of electronic transport properties in the MeV range in n -type silicon wafers using frequency-domain photocarrier radiometry Three-layer photocarrier radiometry model of ion-implanted silicon wafers J. Appl. Phys. 95, 7832 (2004); 10.1063/1.1748862Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspectsThe experimental verification of a previously presented theoretical model for the photothermal radiometric ͑PTR͒ signal from an Si wafer excited by a laser of arbitrary wavelength is presented. A multiparameter fitting algorithm is developed and is used to fit experimental frequency scans to the theoretical model. The recombination lifetime and surface recombination velocity values extracted from the fits are consistent for all of the experiments performed. The diffusion coefficients for the more strongly absorbed excitation wavelengths are greater than those measured when using deeper penetrating excitation wavelengths. This discrepancy is discussed in terms of the dependence of the PTR signal on injected carrier densities and the nonlinearity of the PTR signal with temperature. The sensitivity of the PTR signal to a localized defect is shown to increase with the proximity of the defect to the centroid of the injected carrier density. The method amounts to carrier-density-wave depth profilometry of the relevant electronic transport parameters.

show abstract

Recombination mechanisms and doping density in silicon

Cited by 73 publications

References 20 publications

Ideal Schottky diodes on passivated silicon

Ideal Schottky diodes on passivated silicon

Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots

Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Contact Info

Product

Resources

About