Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Applied Physics Letters

2003

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A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T)∼T−1.5], and the temperature dependence of carrier mobility is μ(T)=(1.06±0.07)×109×T−2.49±0.01 cm2/V s.

Section: ͑Received 24 February 2003; Accepted 14 April 2003͒mentioning

confidence: 99%

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Batista

Applied Physics Letters

2003

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“…1,2 PCR evolved from the well-known infrared photothermal radiometry (PTR), a technique extensively used in semiconductor characterization. [3][4][5][6][7][8][9][10] Both techniques rely on the detection of infrared emission from the semiconductor sample optically excited by an intensity-modulated laser beam with photon energy greater than the fundamental energy gap of the material. Both PTR 4,7-11 and PCR 1,2,12 have been employed to simultaneously determine the transport properties, by recording both the amplitude and phase of the PTR or PCR signal as a function of the modulation frequency over a wide range and then fitting with an appropriate theoretical model via a multi-parameter fitting procedure.…”

Section: Introductionmentioning

confidence: 99%

Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers

Journal of Applied Physics

2004

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Simulations are performed to investigate the accuracy of the simultaneous determination of the electronic transport properties (the carrier lifetime, the carrier diffusion coefficient, and the front and rear surface recombination velocities) of silicon wafers by means of the photocarrier radiometry (PCR) technique through fitting frequency-scan data to a rigorous model via a multi-parameter fitting process. The uncertainties of the fitted parameter values are analyzed by calculating the dependence of the square variance including both amplitude and phase variances on the electronic transport properties. Simulation results show that the ability of the PCR to accurately determine carrier lifetimes gradually decreases for lifetimes longer than roughly 100 microseconds. In case the carrier diffusion coefficient is previously known, the carrier lifetime and front surface recombination velocity can be determined with uncertainties approximately ±20% or less. Experiments with an ion-implanted silicon wafer were performed and the carrier lifetime and front surface recombination velocity were determined with estimated uncertainties approximately ±30% and ±15%, respectively.

“…Both of these phenomena are the result of a modification of the weighting of the contributions to the PCR signal from the (damaged) surface region and the bulk of the sample. 18,19 Quantitatively, this amounts to the separation of the depth integral presented in Eq.…”

mentioning

confidence: 99%

Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths

Applied Physics Letters

et al. 2004

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The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1×1010–1×1016cm−2) for B+11, As+75, P+31, and BF2+ implanted in Si wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the PCR amplitude to implant dose.