Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Abstract

A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T)∼T−1.5], and the temperature dependence of carrier mobility is μ(T)=(1.06±0.07)×109×T−2.49±0.01 cm2/V s.

High-temperature charge and thermal transport properties of then-type thermoelectric material PbSe

“…24 In a similar fashion the low temperature exponent in Fig. 4 can be attributed to acoustical phonon scattering of electrons, in agreement with previous results on highly doped PbSe samples.…”

Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide

“…changes and approaches À 1 as concentrations increase, again in good agreement with theory and experimental data for the effective mass. At high-temperature, strong electronic-scattering mechanisms, non-parabolicity of the bands and/or scattering from high-frequency vibrations of the lattice (optical phonons) possibly have a role to rapidly decrease the values of exponents at high temperature 37,38 .…”

Bi-stable pore size during electrochemical etching of n-type silicon during a thermal ramp

“…The same argument applies to the surface recombination velocity. A relatively strong temperature variation of the lifetime can for example occur if the recombination is primarily through a center, E1, connected to a vacancy-oxygen complex computed for n-type Si [17], and a positive temperature coefficient is common [18,19], so it is not unreasonable that our n-type Si has a diffusion length and/or surface recombination velocity which varies strongly with the temperature. Note that a very large change in the hole concentration on the front side of the wafer can be caused by a relatively small variation of the diffusion length due to the exponential dependence.…”