Minority carrier lifetime in the region close to the interface between the anodic oxide and CdHgTe

Yamamoto, Toshiro; Miyamoto, Yoshinari; Tanikawa, Kunihiro

doi:10.1016/0022-0248(85)90156-3

Cited by 33 publications

(11 citation statements)

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“…High dislocation density is due to the large lattice mismatch (≈14%) between CdTe and GaAs. Yamamoto et al's [14] expression for misfit dislocation density (in cm −2 ) due to gradient of composition in HgCdTe was applied…”

Section: Methods Of Analysismentioning

confidence: 99%

Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation

Kopytko

Jóźwikowski

2015

IEEE Trans. Electron Devices

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An advanced numerical model was applied to investigate dark current-voltage characteristics of high operating temperature (HOT) HgCdTe p + B p nN + and p + B p pN + barrier detectors operated in midwave infrared spectral range. In addition to diffusion mechanisms, all assumed generation-recombination effects, including Shockley-Read-Hall (SRH) mechanism associated with metal site vacancies and dislocations, tunneling, and impact ionization, allow more precise interpretation of obtained experimental results. Investigated structures have the same cap-barrier structural unit (pB p ) and N + bottom contact layer but a different n-and p-type absorption layer optimized at cutoff wavelength up to 3.6 µm at 230 K. Both type barrier detectors exhibit very low experimental dark currents, in the range of 2-3 × 10 −4 A/cm 2 at 230 K. Calculations show that currents in the device with the n-type absorber are limited by Auger processes while currents in the device with the p-type absorption layer are mainly associated with SRH mechanisms. A reduction of the thermal generation rate in a wide bandgap barrier is observed. The presence of the enhanced electric field in the depletion regions increases trap-assisted tunneling via traps located at dislocation cores. In high-quality materials, with a reduced number of structural defects, the device with p-type absorption layer should provide lower dark currents in HOTs.Index Terms-Barrier infrared (IR) detectors, dark current, generation-recombination (GR) effect, HgCdTe, high operating temperature (HOT).

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Section: Methods Of Analysismentioning

confidence: 99%

Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation

Kopytko

Jóźwikowski

2015

IEEE Trans. Electron Devices

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“…The bulk dislocation density was assumed to be composition independent and equal to 1 Â 10 7 cm À2 , which is an upper limit for MOCVD grown HgCdTe on CdTe buffered GaAs [21]; high dislocation density is due to the large lattice mismatch (%14%) between CdTe and GaAs. Yamamoto et al expression for misfit dislocation density (cm À2 ) was applied [26] …”

Section: Parameters Of Materials and Generation-recombination Processesmentioning

confidence: 99%

Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres

Jóźwikowski

Kopytko

Piotrowski

et al. 2011

Solid-State Electronics

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“…For t(, however, the diodes on HgCdTe/CdZnTe had a value that was 50 times longer than that of the diodes on the HgCdTe/sapphire. The high density dislocation makes the lifetime short [9]. …”

Section: Detectors Fabricationmentioning

confidence: 99%

Epitaxial growth of HgCdTe on sapphire for photovoltaic detectors

et al. 1994

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We developed a technique for growing Hg07Cdo3Te on CdTc/sapphirc. Using metal organic chemical vapor deposition (MOCVD), we grew CdTe on sapphire substrates. We use a combination of isothermal vapor phase epitaxy (ISOVPE) followed by liquid phase epitaxy (LPE) to grow Flgo7Cdo3Te on them. The ISOVPE converts the surface of the CdTe layer to Hg7Cd03Te, which decreases the lattice mismatch between CdTe and HgCdTe and decreases the surface defects on HgCdTe that originate from lattice mismatching. After growth, we annealed the wafer in a Hg atmosphere to control the carier concentration. We used the peformance of photovoltaic detectors to examine the wafer quality. A typical diode with a 5-jim cutoff wavelength had an responsivity (Re) value of 2.87 AJW. The diffusion current limits R0A down to 120 K, and the generation-recombination (g-r) current limits R0A at 77 K.

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Minority carrier lifetime in the region close to the interface between the anodic oxide and CdHgTe

Cited by 33 publications

References 1 publication

Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation

Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation

Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres

Epitaxial growth of HgCdTe on sapphire for photovoltaic detectors

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