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A SiNx film deposited by electron cyclotron resonance plasma CVD has been successfully applied as a surface passivant for Hg0.7Cd0.3normalTe n+p diodes. The ECR‐plasma CVD assures low temperature deposition of SiNx film on normalHgCdTe . The SiNx has an excellent interface with normalHgCdTe with a surface‐state density as low as 1×1011 cm−2eV−1 and a low fixed charge of −1.4×1011 cm−2 . Measurement of flatband shifts after exposure to humidity verify that the SiNx is more moisture resistant than the conventional normalZnS passivant. A diode false(λnormalco=5.4 μnormalmfalse) passivated with SiNx had a zero bias resistance of 4×1010 normalΩ false(normaldiode area=4.8×10−5 cm2false) at 77 K.

This letter investigates the relationship between stacking faults (SF’s) and dark-current nonuniformity in a charge-coupled device (CCD) through the measurements of cell-to-cell dark-current distribution, leakage current, C-t characteristics, and the Sirtl etching of the device. It is revealed that stacking faults are strongly connected with the nonuniformity in the dark current and are the dominant origin of the dark-current spikes.

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