This letter investigates the relationship between stacking faults (SF’s) and dark-current nonuniformity in a charge-coupled device (CCD) through the measurements of cell-to-cell dark-current distribution, leakage current, C-t characteristics, and the Sirtl etching of the device. It is revealed that stacking faults are strongly connected with the nonuniformity in the dark current and are the dominant origin of the dark-current spikes.

The basic concept, structure and some experimental results of a new type of CCD are reported. The CCD has only two straight gate electrodes over a meander channel and no bus lines for clocking. The structure gives some advantages over conventional CCD's in applications such as transversal filters, line addressable memories and area sensors. The signal can be picked up at any point along the channel without a crossover. The simple electrode configuration promisses high packing density.

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