The Electronic Behaviors of Oxygen-Deficient VO<sub>2</sub> Thin Films in Low Temperature Region

Nagashima, M.; Wada, Hideo; Tanikawa, Kunihiro; Shirahata, Hiromichi

doi:10.1143/jjap.37.4433

Cited by 11 publications

(9 citation statements)

References 21 publications

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“…The transport characteristics of transition metal oxides are sensitive to redox reactions because the valence numbers of the transition metal ions are easily changed by the reactions, which affect the carrier density and/or stabilization of the crystal structure1234. Of the prototypical materials, VO 2 is promising as it undergoes a metal-insulator transition (MIT) and the resistance changes by orders of magnitude around 340 K. In VO 2 nano to microstructures5678910111213, the coupling of the MIT with mechanical789, optical13, thermal12 and electronic properties911 can be used in tunable resonators, optical switchers, electronic and thermo-sensing devices.…”

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confidence: 99%

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Sasaki

Ueda

Kanki

et al. 2015

Sci Rep

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Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides.

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confidence: 99%

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Sasaki

Ueda

Kanki

et al. 2015

Sci Rep

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“…25 However, our temperature dependence is comparable to that observed by Wu et al 19 in both suspended and clamped devices that were also fabricated by mechanical transfer from the growth substrate to the device substrate. VO 2 thin films have shown an activated resistivity with an activation energy that is dependent on O 2 partial pressure during growth, 36,37 suggesting that oxygen vacancies and/or vanadium interstitials may influence the transport. The room temperature resistivity of our nanobeams is an order of magnitude lower than that of Wei et al, 25 consistent with the presence of carriers provided by these defects.…”

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Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO₂ Nanobeam

2009

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The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.

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“…Actually, a large amount of vacancies can be generated during the e-beam irradiation. Some deep levels or midgaps formed by oxygen vacancies or disorder effects may play an important role in increasing the conductivity . The variation of current density with the e-beam irradiation is plotted after the electrical properties of several nanowires are measured in Figure b.…”

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Electrothermally Induced Highly Responsive and Highly Selective Vanadium Oxide Hydrogen Sensor Based on Metal–Insulator Transition

Byon

Kim

et al. 2011

J. Phys. Chem. C

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We report highly effective hydrogen gas detection based on the metal–insulator transition (MIT) by the electrothermally induced Pd-nanoparticles-decorated vanadium oxide (VO2) nanowire prepared by the efficient and size-controllable growth method originating from V2O5 thin film driven by supercooled liquid nanodroplets. By irradiating a well-defined electron beam into the nanowires, we could significantly increase the conductivity up to four times with only a modest change in the semiconductor-to-metal transition temperature (<2 °C). When exposed to trace amounts of hydrogen gas in a single nanowire configuration, the enhanced conductivity gave rise to about a two times as fast transition to metallic phase even near room temperature (∼35 °C), by reaching much faster (∼3×) a critical current density at which the self-heating initiates. Consequently, we achieved the greatly shorter response time as well as lower operating temperature and voltage for the detection of hydrogen gas in a single VO2 nanowire device, which can be attributed to the self-heating effect accelerated by the increase in the conductivity. The single nanowire sensor also shows the capability of detecting selectively hydrogen of different three gases (O2, CO, and ethylene).

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The Electronic Behaviors of Oxygen-Deficient VO₂ Thin Films in Low Temperature Region

Cited by 11 publications

References 21 publications

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO₂ Nanobeam

Electrothermally Induced Highly Responsive and Highly Selective Vanadium Oxide Hydrogen Sensor Based on Metal–Insulator Transition

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The Electronic Behaviors of Oxygen-Deficient VO2 Thin Films in Low Temperature Region

Cited by 11 publications

References 21 publications

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2 Nanobeam

Electrothermally Induced Highly Responsive and Highly Selective Vanadium Oxide Hydrogen Sensor Based on Metal–Insulator Transition

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The Electronic Behaviors of Oxygen-Deficient VO₂ Thin Films in Low Temperature Region

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO₂ Nanobeam