Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

Suzuki, Hisao; Matsushita, T.; Katayama, Masahiro; Maeda, Kouji; Ikari, Tetsuo

doi:10.7567/jjap.53.018001

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…The calculated critical thickness was seven times lower than the thickness of the AR of structure B -1.613 mm. Yastrubchak et al (2004) and Suzuki et al (2014) showed that for In x Ga 1Àx As layers on a GaAs substrate there are two types of misfit dislocations, and , which lie along the [ " 1 110] and [110] directions, respectively. Anisotropy of the dislocation density was observed for these two directions.…”

Section: Strain Relaxation and Dislocation Density From Analysis Of Dmentioning

confidence: 99%

On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures

et al. 2017

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The Al 0.45 Ga 0.55 As/In x Ga 1Àx As active regions in quantum cascade laser structures grown on (001) GaAs substrates were investigated using the highresolution X-ray diffraction method. The onset of the strain relaxation process has been studied. Reciprocal-space mapping showed that diffuse scattering is visible in the early stage of relaxation for the structure with x = 2.64% in the In x Ga 1Àx As layers. It has been proved that the diffuse scattering is the result of misfit dislocations generated by partial relaxation of the structures. The integration of the diffuse scattering has enabled determination of the dislocation density.

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Section: Strain Relaxation and Dislocation Density From Analysis Of Dmentioning

confidence: 99%

On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures

et al. 2017

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Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Yuan

Huang

Liu

et al. 2020

Materials Science in Semiconductor Processing

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Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers

Kumar

Dixit

Ganguli

et al. 2016

Journal of Applied Physics

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Anisotropic distribution of microstructure in GaP/GaAs epitaxial layers is investigated by performing high resolution x-ray diffraction (HRXRD) experiments for symmetric reflections at different azimuths. The observed anisotropy leads to the different values of lattice relaxation along the [011¯] and [01¯1¯] directions as revealed by the reciprocal space maps recorded at 0° and 90° azimuths for (42¯2¯) and (422¯) reflections. The anisotropic relaxation process causes large differences in the full width at half maximum of (400) diffraction peaks of omega scans along the [011¯] and [01¯1¯] directions. It therefore provides large differences in the values of microstructural parameters of the GaP epitaxial layer along the two in-plane orthogonal directions. A systematic Williamson-Hall analysis of HRXRD data confirms the presence of large anisotropy of lattice relaxation process along the [011¯] and [01¯1¯] directions. Due to the large lattice mismatch, the GaP/GaAs epilayer presented here possesses grain boundaries and the broadening of the HRXRD pattern is strongly affected by the anisotropy of microstructure and dislocations. The kinetics of dislocations is discussed where it is observed that the misfit strain is primarily relieved by 90° partial dislocations up to a certain thickness of epilayer and thereafter the nucleation of 60° perfect dislocations dominates the strain relaxation process. The effect of the anisotropic distribution of relaxation process is also seen in the surface topography of GaP epilayer as revealed by atomic force microscopy images. The origin of the anisotropic distribution of dislocations is explained by considering the Burgers vector network, and its consequences are also observed in the cross sectional transmission electron microscopy images.

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Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

Cited by 3 publications

References 12 publications

On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures

On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers

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Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

Cited by 3 publications

References 12 publications

On the onset of strain relaxation in the Al0.45Ga0.55As/InxGa1−xAs active region in quantum cascade laser structures

On the onset of strain relaxation in the Al0.45Ga0.55As/InxGa1−xAs active region in quantum cascade laser structures

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers

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On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures

On the onset of strain relaxation in the Al_0.45Ga_0.55As/In_xGa_1−xAs active region in quantum cascade laser structures