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The anisotropies of misfit dislocations (MDs) formed at an InGaAs/GaAs(001) interface grown by molecular beam epitaxy were investigated using X-ray topography and X-ray reciprocal space mapping techniques. The MDs bunched in small regions to form MD bunches. The number of MDs running along the direction (α-MDs) included in one MD bunch was larger than that along the [110] direction (β-MDs). In addition, the bunched α-MDs were aligned more periodically than the other MDs.

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T. Matsushita

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Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

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