Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Abstract

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector.

Simultaneous enhancements of polarization and magnetization in epitaxialPb(Zr0.52Ti0.48)O3/Mukherjee1, Hordagoda2, Lampen3 et al. 2015Phys. Rev. B29390View full textAdd to dashboardCite

“…9(a). The ferroelectric characteristics of P/C(0nm)/L (P r = 52 μC/cm 2 and E C = 30 kV/cm) are consistent with earlier reports for epitaxial PZT films of the same composition [49,50]. Compared to the PZT/LSMO system, enhanced polarization is found in the heterostructures with an ultrathin (10-20 nm) CFO sandwich-layer.…”

Monte Carlo Simulation of Ferroelectric Behavior in PZT Films by Using a Stress Dependent DIFFOUR Hamiltonian

“…A reduction in their area with the increase of stress, and thereby, a decrease in the coercive field can be observed due to non easy alignment in z direction, Table 2. Experimental data on ferroelectrics and in particular on PZT systems coincide reasonable well with this simulated behavior [24], [25], [26], [27]. On the other hand, the observed effect of an increasing field in the out-of-plane direction is the horizontal shift of the polarization curves, accompanied with higher values of polarization and minor deviating slopes, meaning a less defined critical temperature peaks for the corresponding susceptibility curves, Figure 3.…”

A Fast Room-Temperature Poling Process of Piezoelectric Pb(Zr<SUB>0</SUB><SUB>.45</SUB>Ti<SUB>0</SUB><SUB>.55</SUB>)O<SUB>3</SUB> Thin Films

“…In that case, d 33 f can be estimated as d 33 f E b = 2Q 11 eff 0 33 E b P 3 E b , where Q 11 eff , 0 , 33 and P 3 are the effective electrostrictive constant, dielectric constant of vacuum, relative dielectric constant of film and out-of-plane polarization, respectively. 27 With improving P r on poling, also P 3 E b increases, but simultaneously 33 E b = P / 0 E E b decreases. The net effect is that d 33 f improves relatively less on poling than P r .…”