2020
DOI: 10.1103/physrevlett.125.226802
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Misorientation-Controlled Cross-Plane Thermoelectricity in Twisted Bilayer Graphene

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Cited by 33 publications
(29 citation statements)
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“…Evidently, S exhibits a linear dependence on T at all doping including the higher-energy dispersive band, except in the vicinity of ν = ±2, thus validating the estimation of ∆T from Mott fitting [25]. The S ∝ T behavior is expected in a degenerate weakly or non-interacting metal within the semiclassical framework, and has been verified for monolayer graphene [17] as well as tBLG at slightly larger θ (2 • θ 5 • ) [28]. Close to ν = ±2, however, we find an unexpected increase in S when temperature is decreased below ∼ 40 K, in contrast to the expectation of S ≈ 0 (inset of Fig.…”
supporting
confidence: 76%
“…Evidently, S exhibits a linear dependence on T at all doping including the higher-energy dispersive band, except in the vicinity of ν = ±2, thus validating the estimation of ∆T from Mott fitting [25]. The S ∝ T behavior is expected in a degenerate weakly or non-interacting metal within the semiclassical framework, and has been verified for monolayer graphene [17] as well as tBLG at slightly larger θ (2 • θ 5 • ) [28]. Close to ν = ±2, however, we find an unexpected increase in S when temperature is decreased below ∼ 40 K, in contrast to the expectation of S ≈ 0 (inset of Fig.…”
supporting
confidence: 76%
“…We demonstrate the extreme sensitivity of the TEP to the band structure and that it can provide information about the electronic structure, which cannot be determined by conductance measurements alone . Earlier studies on the TEP of low or moderate mobility BLG have shown a general agreement with the semiclassical Mott formula where Δ V is the thermoelectric voltage, G is the energy-dependent conductance of the sample, T is the sample temperature, and Δ T is the temperature gradient. Importantly, the factor d G /d n is evaluated from the experimentally obtained transfer characteristics and therefore captures the TEP contributions from energy-dependent and energy-independent scattering processes (section S12).…”
Section: Introductionmentioning
confidence: 54%
“…To determine the thermopower or Seebeck coefficient (S), one needs to measure the generated thermoelectric voltage and the temperature difference (ΔT = T h − T c , where T h and T c are the temperatures of the hot and cold contacts, respectively). We have utilized the well-established 2ω lock-in technique [27][28][29][30][31][32][33] for measuring the thermoelectric voltage (V 2ω ) at ω = 13 Hz. To measure ΔT, we have utilized Johnson noise thermometry [35][36][37][38] .…”
Section: Set-up and Device Responsementioning
confidence: 99%
“…Motivated by these observations, we have extensively explored the thermopower response of MATBLG and non magic-angle twisted bilayer graphene (TBLG) devices. Unlike previous work involving graphene and TBLG [27][28][29][30][31][32][33][34] , we have utilized Johnson noise thermometry [35][36][37][38] to directly measure the temperature gradient across the MATBLG device and accurately determine S across a temperature ranging from 100 mK to 10 K. Our measurements reveal an intricate dependence of S on carrier density (ν), temperature (T) and magnetic field (B). Our key observations are as follows.…”
mentioning
confidence: 99%